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  • Articles  (6)
  • 68.55  (6)
  • Springer  (6)
  • 1980-1984  (6)
  • 1982  (6)
  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (6)
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  • Articles  (6)
Source
Keywords
Publisher
  • Springer  (6)
Years
  • 1980-1984  (6)
Year
Topic
  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (6)
  • Physics  (6)
  • 1
    Electronic Resource
    Electronic Resource
    Cadmium deposition on transparent substrates by laser induced dissociation of Cd(CH3)2 at visible wavelengths (1982)
    Springer
    Applied physics 27 (1982), S. 133-138 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 81.15-g ; 82.50
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The laser initiated formation of Cd-deposits from dimethylcadmium (DMCd) on quartz substrates has been investigated at various wavelengths between 337 and 676 nm. In this range substrate and DMCd are both transparent. The deposition mechanism is initiated by multiphoton dissociation of DMCd molecules adsorbed at the glass substrate and continues by pyrolysis of DMCd molecules at the laser-heated metallic deposit. Metal structures with a resolution below 1 μm have been obtained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616663
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  • 2
    Electronic Resource
    Electronic Resource
    Al reaction with SiO2 an auger electron spectroscopy and energy loss spectroscopy study (1982)
    Springer
    Applied physics 28 (1982), S. 247-250 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 73.60 ; 79.20 ; 82.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Evidence for a reaction between aluminium and SiO2 film is presented using Auger electron spectroscopy (AES) and low-energy electron-loss spectroscopy (ELS) techniques. This reaction is studied “in situ” during the manufacture of metal insulator semiconductor devices (MIS), under ultra-high vacuum conditions (UHV). A reduction of the SiO2 film upon aluminization occurs, even at room temperature, giving rise to a complex interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00618702
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  • 3
    Electronic Resource
    Electronic Resource
    Growth kinetics of Si-molecular beam epitaxy (1982)
    Springer
    Applied physics 28 (1982), S. 129-135 
    Details
    ISSN: 1432-0630
    Keywords: 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Growth mode, surface morphology, crystal perfection and growth rate of siliconmolecular beam epitaxy films were observed as function of temperature (450°–950°C), silicon flux density (8×1014−8×1015cm2/s) and surface orientation (111, 110, 100). Within the varied parameters growth proceeds by the two-dimensional growth mode via the lateral motion of atomic steps originating from the slight misorientation of commercially available substrates (typically 0.25°). Single crystalline films with high lattice perfection and smooth surfaces result from this growth mode. The growth rate — linearly dependent on Si-flux density and independant of temperature and orientation — indicates a condensation coefficient near unity. An atomic step flow model on the basis of the Burton-Cabrera-Frank theory explains this behaviour by mobile adatoms with low activation energy of diffusion.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617144
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  • 4
    Electronic Resource
    Electronic Resource
    A simple technique to deposit molybdenum thin films (1982)
    Springer
    Applied physics 28 (1982), S. 125-128 
    Details
    ISSN: 1432-0630
    Keywords: 52 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A simple technique is proposed for metallizing nonconductive objects. The technique, which is based on a plasma-induced dissociation of Mo(CO)6 molecules, is inexpensive with no sophisticated instrument needed, and allows us to deposit fine grained, adherent thin films of molybdenum on nonrefractory substrates. It is believed that the technique possesses a variety of potential applications in laboratory works.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617143
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  • 5
    Electronic Resource
    Electronic Resource
    Strain analysis and optical characterization of LPE InGaAsP laser-confining layers (1982)
    Springer
    Applied physics 27 (1982), S. 213-218 
    Details
    ISSN: 1432-0630
    Keywords: 71.25 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The compositional dependence of lattice parameters and strains induced by lattice mismatch of liquid phase epitaxial (LPE) In1−x Ga x AS y P1−y /InP with smallx andy are studied. The measured elastic strain is proportional to the lattice mismatch within certain critical limits; as much as ∼78% of the mismatch strain is found to be accommodated elastically under both compression and tension. The near-band edge absorption and photoluminescence measurements yield the free electron and hole recombination probability and the compositional dependence of the energy gap at low temperature. The influence of the lattice mismatch on the optical properties is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00619082
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  • 6
    Electronic Resource
    Electronic Resource
    A TEM study of crystal and domain structures of Nb-Doped 95/5 PZT ceramics (1982)
    Springer
    Applied physics 29 (1982), S. 237-244 
    Details
    ISSN: 1432-0630
    Keywords: 61.10 ; 64 ; 68.55 ; 77.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract 95/5 PZT ceramics with compositions of Pb(Zr1−x Ti x )3+1 wt% Nb2O5 (x=0.025 and 0.04) are studied with TEM. The coexistence of both ferroelectric (F) and antiferroelectric (AF) phases in one ceramic grain at room temperature is confirmed for these two compositions. The AF phase is mainly tetragonal, while a pseudo-cubic arrangement of AF polarization is also possibly present. When the Ti4+ concentration is increased, the F phase becomes predominant. Direct interfaces between F and AF domains can be observed, the former expands at the expense of the latter when bombarded by 200 keV electrons.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00615074
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