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  • Articles  (8)
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  • 85.60  (8)
  • Springer  (8)
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  • 1977  (8)
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  • Articles  (8)
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  • Springer  (8)
  • American Association for the Advancement of Science
  • American Meteorological Society
  • American Physical Society
  • Blackwell Publishing Ltd
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  • 2020-2024
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  • 2000-2004
  • 1975-1979  (8)
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  • 1
    Electronic Resource
    Electronic Resource
    Fiber optical communications devices (1977)
    Springer
    Applied physics 13 (1977), S. 211-223 
    Details
    ISSN: 1432-0630
    Keywords: 42.80 ; 85.30 ; 85.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Both low attenuation silica optical fibers with peak transmission in the wavelength regions of 0.85 μm, and 1.05 μm, and improved lasers at both wavelengths are now available. In this review paper, the principal components for emission, modulation and detection are described. The characteristics of both semiconductor lasers, made of GaAs and related compounds, emitting at 0.85 μm or 1.05 μm and high neodymium-content lasers are discussed. For modulation, current modulation of GaAs lasers and external electro-optic modulation are considered. Concerning detection, the realisation of Si photodetectors suitable at 0.85 μm and the new photodetectors at 1.05 μm from Ga1−x In x As are reviewed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00882884
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  • 2
    Electronic Resource
    Electronic Resource
    Thin-film MOM-diodes for infrared detection (1977)
    Springer
    Applied physics 13 (1977), S. 343-349 
    Details
    ISSN: 1432-0630
    Keywords: 85.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Thin-film metal-oxide-metal (MOM) diodes were fabricated by a positivephotoresist process using iron oxide and chromium masks. Reproducible junctions were obtained with areas of 2 μm2. The diodes exhibit stable, highly nonlinear I–V characteristics. Several hundred diodes were printed on the same substrate with nonlinearity parameters varying less than 15%. Infrared rectification was tested with a stabilized 10.6 μm CO2 laser.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00882608
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  • 3
    Electronic Resource
    Electronic Resource
    Low-loss rotator and application for isolator design (1977)
    Springer
    Applied physics 13 (1977), S. 307-309 
    Details
    ISSN: 1432-0630
    Keywords: 42.80 ; 85.60 ; 78.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The Faraday rotation associated with the Zeeman effect in gases is used to rotate the plane or polarization of plane polarized light with low loss of intensity. Advantage is taken of the rapid decrease of absorption relative to Faraday rotation between the split Zeeman components. Calculations of this Faraday rotation are applied to obtain design parameters for an isolator for 5.26 μm which show a significant improvement over conventional designs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00882898
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  • 4
    Electronic Resource
    Electronic Resource
    Solar energy conversion with fluorescent collectors (1977)
    Springer
    Applied physics 14 (1977), S. 123-139 
    Details
    ISSN: 1432-0630
    Keywords: 84.60 ; 85.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A new principle for solar energy conversion is proposed and evaluated theoretically. Collection and concentration of direct and diffuse radiation is possible by the use of a stack of transparent sheets of material doped with fluorescent dyes. High efficiency of light collection can be achieved by light guiding and special design of collectors. The optical path length in a triangular collector is computed. In combination with solar cells this type of collector offers the advantage of separating the various fractions of light and converting them with solar cells with different bandgaps. Theoretical conversion efficiency under optimum conditions is 32% for a system with four semiconductors. Thermal energy conversion offers several advantages over conventional collectors: High temperature and efficiency even under weak illumination, separation of heat transport and radiation collection, low thermal mass. Thermal efficiency is computed to be between 42% and 60%. Very attractive appear hybrid systems for generation of thermal and electric energy. An estimate of the economics of electricity generation shows that due to the concentration costs can be much lower than possible today. With the use of only silicon cells the breakeven point of $0.5/W is almost reached. Practical difficulties to be solved are: Synthesis of dyes with stringent requirements, identification of plastic materials with high transparency and development of solar cells with higher bandgaps.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00883080
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  • 5
    Electronic Resource
    Electronic Resource
    Modulation behavior of semiconductor injection lasers (1977)
    Springer
    Applied physics 14 (1977), S. 255-268 
    Details
    ISSN: 1432-0630
    Keywords: 42.80 ; 42.55 ; 85.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract GaAs double heterostructure semiconductor injection lasers which now exhibit more than 25000 h cw room temperature lifetime are of great interest for future use as directly modulated transmitters for high bit-rate fiber optical communications. The effects limiting this application are modulation distortions, spectral width and additional spectral broadening in the case of modulation and spontaneous fluctuations of the output power. The dynamic and spectral behavior of injection lasers, the methods of high bit-rate modulation and the improvement of the high bit-rate modulation capability by coupling two lasers are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00882730
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  • 6
    Electronic Resource
    Electronic Resource
    Negative affinity 3–5 photocathodes: Their physics and technology (1977)
    Springer
    Applied physics 12 (1977), S. 115-130 
    Details
    ISSN: 1432-0630
    Keywords: 72.40 ; 85.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Negative electron affinity (NEA) photocathodes are defined by the relationship between the potential barrier at the surface and the bottom of the conduction band in the bulk of the material. If the bottom of the conduction band liesabove the potential barrier at the surface, the device is said to have a negative electron affinity. In practice this condition is obtained by heavyp-doping of the semiconductor (to encourage downward band bending at the surface) and by adding a thin film (several atomic layers) of cesium richcesium oxide on the clean semiconductor surface. The physics, development, fabrication, and applications of the NEA cathode are reviewed. The threshold of response of a NEA photocathode is set by the semiconductor bandgap. By alloying to form ternary or quaternary 3–5 compounds (3–5 compounds are formed from elements of the 3rd and 5th columns of the periodic table), the bandgap (and thus the threshold) can be placed at any desired photon energy within certain limits. The most important limit is that at about 1.1 eV which is the lowest limit achieved for NEA cathodes. This limit is set by the point at which the bandgap of the 3–5 material becomes less than the surface potential barrier. Fundamental work aimed at understanding the 3–5: cesium oxide “interfacial” barrier which sets this limitation is briefly discussed. Because of the “interfacial” barrier, the quantum yield of NEA cathodes decreases as the threshold of response moves to lower photon energy. Field assisted photocathodes provide a means of extending the threshold of response beyond 1.1 eV. Two different approaches to field assisted photocathodes and recent achievements are discussed. A major advancement has been the achievement of semi-transparent NEA photocathodes by sealing GaAs to glass. This makes possible practical NEA image tubes. The thermionic emission from 3-5 NEA cathodes can be orders of magnitude lower than that from conventional photocathodes. The reasons for this are discussed. Yield and dark current data are given on 3-5 NEA cathodes in operating photomultipliers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00896137
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  • 7
    Electronic Resource
    Electronic Resource
    Electrochromism and local order in amorphous WO3 (1977)
    Springer
    Applied physics 13 (1977), S. 231-237 
    Details
    ISSN: 1432-0630
    Keywords: 66 ; 85.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract WO3 films prepared under different conditions (evaporation, reactive sputtering and spraying of aqueous solutions of metatungstic acid) differ by orders of magnitude in their electrochromic sensitivity. Diffuse X-ray studies show the evaporated and sputtered films to be amorphous and to consists of a disordered network of corner sharing WO6 octahedra. Sprayed films have different degrees of crystallinity depending on spraying conditions. From differential scanning calorimetry we conclude that the crystal water present in most films strongly affects the local order of the corner sharing octahedra. We find that crystal water not only provides a high ionic conductivity which is conditional for a fast electrochromic reaction but also stabilises electrocatalytically active surface sites for fast hydrogen or Li exchange with the adjacent electrolyte.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00882886
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  • 8
    Electronic Resource
    Electronic Resource
    Comments on nonlinearity, response time and polarity reversal in a thermal field emission metal whisker diode (1977)
    Springer
    Applied physics 14 (1977), S. 289-294 
    Details
    ISSN: 1432-0630
    Keywords: 79.70 ; 42.65 ; 85.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract In a series of recent experiments, research groups have made absolute frequency measurements with laser beams in the infrared region (μm) using a metal-metal point contact diode for the generation, frequency mixing and detection. At present there are two models which attempt to explain the rectification mechanism of the diode: 1) Tunneling of electrons through an intermediate oxide film from whisker to the metal base, i.e., configuration is considered to be a metal-oxide-metal (MOM) tunneling junction. 2) Rectification and nonlinear processes are the result of a thermal enchanced field emission. Such emission is a consequence of the immersion of the whisker in the laser radiation which results in conduction induced thermionic emission and/or generation of an electric field at the tip necessary for electron tunneling by field emission. The purpose of this comment is: a) to discuss qualitatively the basic difference between MOM and TFE theories as regards the origin of the nonlinearity and rectification properties of the metal point contact junction; b) to review the analyses describing the ultimate frequency response of the device; and 3) to provide a possible explanation for polarity reversal consistent with the TFE mechanism describing the operation of the whisker diode.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00882734
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