Publication Date:
2014-12-12
Description:
Author(s): G. Allison, T. Fujita, K. Morimoto, S. Teraoka, M. Larsson, H. Kiyama, A. Oiwa, S. Haffouz, D. G. Austing, A. Ludwig, A. D. Wieck, and S. Tarucha We evaluate the Landé g factor of electrons in quantum dots (QDs) fabricated from GaAs quantum well (QW) structures of different well width. We first determine the Landé electron g factor of the QWs through resistive detection of electron spin resonance and compare it to the enhanced electron g fact... [Phys. Rev. B 90, 235310] Published Thu Dec 11, 2014
Keywords:
Semiconductors II: surfaces, interfaces, microstructures, and related topics
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
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