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  • Articles  (5)
  • 73.40  (5)
  • 1985-1989  (5)
  • 1950-1954
  • 1987  (5)
  • 1951
  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (5)
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  • Articles  (5)
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Years
  • 1985-1989  (5)
  • 1950-1954
Year
Topic
  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (5)
  • Physics  (5)
  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 44 (1987), S. 191-194 
    ISSN: 1432-0630
    Keywords: 07.50 ; 73.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A method for the dc surface photovoltage measurement in MOS capacitors is proposed. Results of surface-photovoltage measurements performed for two kinds of MOS structures on p-type silicon substrates are presented. Comparison of them with results obtained form C-V characteristics exhibits a satisfactory conformity. Two groups of surface states beginning at E t 1 = Ev + 0.25 eV and E t 2 = Ec − 0.30 eV in the oxide-silicon interface of the investigated structures had been found.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 43 (1987), S. 117-121 
    ISSN: 1432-0630
    Keywords: 61.70 ; 73.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Experimentally observed surface-photovoltage-method (SPV) spectra in the subbandgap energy range are presented for a real (100)GaAs surface, treated with preepitaxial procedures. Conductive, n-type GaAs and semi-insulating GaAs are studied. It is shown that SPV spectra are formed as a result of the simultaneous action of both surface states and deep bulk levels. The spectral shape of the surface-state photoionization cross-section is qualitatively determined. The influence of the deep bulk levels on the SPV spectra is explained, and the photoionization cross-section for both Cr and EL2 levels is qualitatively determined.
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  • 3
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 42 (1987), S. 65-67 
    ISSN: 1432-0630
    Keywords: 73.40 ; 76 ; 75
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The presence of Δm=0 lines of the Mössbauer spectra of small Fe3O4 particles coated with an organic surfactant in an applied field of 7 T at 5 K shows a non-collinear magnetic structure in the surface layer of these particles. From the temperature dependence of the hyperfine field, the anisotropy constantK was calculated.
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  • 4
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 42 (1987), S. 249-255 
    ISSN: 1432-0630
    Keywords: 73.40 ; 85.30 ; 71.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Doped ZnO single crystals were deposited with gold and indium in 1×10−8 Torr vacuum. The lithium-doped ZnO single crystals and the gold interface revealed not only a Schottky diode but also varactor characteristics. TheI-V andC-V characteristics of ZnO:Li-Au devices were determined in the 0–140 mV and 0–1.5 V ranges. The frequency dependence of ZnO:Li-Au varactors was investigated in the 6–550 kHz range and the value of the most efficient varactor frequency was found to be 50 kHz for the lithium-doped samples prepared. To bring further insight into the matter the concept of excess capacitance was introduced and 1/C 2=f(−V) curves were rearranged between 0–150 mV where Schottky characteristics are non-linear. The excess capacitance values of lithium-doped varactors were determined at four different frequencies and ranged from 26 pF at 50 kHz to 70 pF at 6kHz. Finally, the bulk donor concentrations of the single crystals were calculated from the modifiedC-V curves to beN D= 3×1020 m−3. On the other hand, the bulk donor concentration determined from the non-modifiedC-V curves wasN D′=1.02×1022 m−3.
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  • 5
    ISSN: 1432-0630
    Keywords: 73.20 ; 73.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract An attempt is made to study the Einstein relations for the diffusivity-mobility ratios of the carriers in n-channel inversion layers on ternary chalcopyrite semiconductors under both weak and strong electric field limits, taking n-channel inversion layers on CdGeAs2 as an example. It is found, on the basis of newly derived 2D E-ks dispersion relations of the conduction electrons for both the limits by considering the various types of anisotropies in the energy band, that the ratios increase with increasing surface electric fields for both the limits and the theoretical results are in qualitative agreement with the suggested experimental method of determining the Einstein relation in degenerate semiconductors having arbitrary dispersion law. The corresponding well-known results for isotropic twoband Kane model are also obtained from the expressions derived.
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