ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • Articles  (7)
  • 79.20  (7)
  • 1995-1999
  • 1985-1989  (7)
  • 1950-1954
  • 1945-1949
  • 1985  (7)
  • 1951
  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (7)
  • Sociology
Collection
  • Articles  (7)
Source
Keywords
Publisher
Years
  • 1995-1999
  • 1985-1989  (7)
  • 1950-1954
  • 1945-1949
Year
Topic
  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (7)
  • Sociology
  • Physics  (8)
  • 1
    Electronic Resource
    Electronic Resource
    Experimental and theoretical investigations into the origin of cross-contamination effects observed in a quadrupole-based SIMS instrument (1985)
    Springer
    Applied physics 38 (1985), S. 235-252 
    Details
    ISSN: 1432-0630
    Keywords: 07.75 ; 61.70 ; 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The minimum-detection limits achievable in SIMS analyses are often determined by transport of material from surrounding surfaces to the bombarded sample. This cross-contamination (or memory) effect was studied in great detail, both experimentally and theoretically. The measurements were performed using a quadrupole-based ion microprobe operated at a secondary-ion extraction voltage of less than 200 V (primary ions mostly 8keV O 2 + ). It was found that the flux of particles liberated from surrounding surfaces consists of neutrals as well as positive and negative ions. Contaminant species condensing on the bombarded sample could be discriminated from other backsputtered species through differences in their apparent energy spectra and by other means. The apparent concentration due to material deposited on the sample surface was directly proportional to the bombarded area. For an area of 1 mm2 the maximum apparent concentration of Si in GaAs amounted to ∼5 × 1016atoms/cm3. The rate of contamination decreased strongly with increasing spacing between the bombarded sample and the collector. The intensities of backsputtered ions and neutrals increased strongly with increasing mass of the target atoms (factor of 10 to 50 due to a change from carbon to gold). The effect of the primary ion mass (O 2 + , Ne+, and Xe+) and energy (5–10keV) was comparatively small. During prolonged bombardment of one particular target material, the rate of contamination due to species not contained in the sample decreased exponentially with increasing fluence. In order to explain the experimental results a model is presented in which the backsputtering effect is attributed to bombardment of surrounding walls by high-energy particles reflected or sputtered from the analysed sample. The level of sample contamination is described by a formula which contains only measurable quantities. Cross-contamination efficiencies are worked out in detail using calculated energy spectra of sputtered and reflected particles in combination with the energy dependence of the sputtering yield of the assumed wall material. The experimental findings are shown to be good agreement with the essential predictions of the model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616059
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Si etching affected by ir laser irradiation (1985)
    Springer
    Applied physics 37 (1985), S. 117-119 
    Details
    ISSN: 1432-0630
    Keywords: 82.50 ; 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Silicon was etched in an aqueous solution of sodium hydroxide under ir laser irradiation. Two types of lasers were used, a Nd:YAG laser with a wavelength of λ=1.06 μm and a CO2 laser with λ=10.6 μm. Small-size blind holes, through holes and reliefs were formed on a Si target, and even a special type of hole can be formed with help of a CO2 laser, namely a blind hole with a hillock in its center.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00618861
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Contribution to time-resolved enhanced chemical etching and simultaneous annealing of ion implantation amorphized silicon under intense laser irradiation (1985)
    Springer
    Applied physics 38 (1985), S. 109-115 
    Details
    ISSN: 1432-0630
    Keywords: 82.50 ; 82.65 ; 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Surfaces of single-crystal silicon wafers are amorphized by high-dose phosphorous ion implantation. These surfaces of the wafers, immersed in concentrated KOH, are laser-chemically etched by pulse irradiation of a ruby laser. Simultaneously, the remaining parts of the amorphous layer are annealed. The time dependence of the etching process enhanced during pulse irradiation is recorded and analysed. Reasons for the etching rates which differ between amorphous and single-crystal silicon are given on the basis of experimental and numerical results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00620461
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Laser fluorescence measurements of the flux density of titanium sputtered from an oxygen covered surface (1985)
    Springer
    Applied physics 38 (1985), S. 131-138 
    Details
    ISSN: 1432-0630
    Keywords: 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Laser-induced fluorescence spectroscopy is successfully used for the determination of the flux of ion-sputtered wall material. If the surface is clean, the majority of the particles are found in the groundstate multiplet of the neutral atoms. For an oxidized surface, however, excited and ionized states constitute a considerable fraction of the sputtered particle flux. This is investigated in detail in this paper by measuring population densities and velocity distributions of some selected atomic and ionic states of titanium. The respective flux densities and fractions of the total flux density are given, too. A criterion is found which may help to distinguish a clean from a heavily oxidized surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00620464
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    A simple formula for low-energy sputtering yields (1985)
    Springer
    Applied physics 36 (1985), S. 37-42 
    Details
    ISSN: 1432-0630
    Keywords: 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A simple formula for low-energy sputtering yields of elemental targets is presented. The formula follows directly from Sigmund's theory but includes a modified form of the functionα(M t /M p ) and an accurate expression for the nuclear stopping cross section. Good agreement with experimental results is obtained for the projectiles Ne, Ar, Kr sputtering not too reactive surfaces at energies ≲1 keV. Further experiments are suggested as well as theoretical work concerning the meaning of the surface binding energy and the effect of the surface on the sputtering process in general.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616458
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Computer simulation of two-component target sputtering (1985)
    Springer
    Applied physics 37 (1985), S. 95-108 
    Details
    ISSN: 1432-0630
    Keywords: 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The TRIM SP computer simulation program, which is based on the binary collision approximation, is applied to sputtering of two component targets. The topics discussed in this paper are: contribution of different processes leading to sputtering, total and partial sputtering yields, surface compositions at stationary conditions, sputtering of isotopic mixtures, angular and energy distributions and the escape depth of sputtered particles. Targets investigated are TaC, WC, TiC, TiD2, and B (as an isotope mixture), bombarded by the noble gas ions and D (in the case of TiD2). Comparison with experimental data and calculated results show good agreement demonstrating that collisional effects are sufficient to describe the experimental data in the examples investigated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00618859
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Reflection of low-energy hydrogen from solids (1985)
    Springer
    Applied physics 38 (1985), S. 123-129 
    Details
    ISSN: 1432-0630
    Keywords: 79.20 ; 52.40Hf
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The Monte Carlo Simulation Program TRIM is used to calculate particle and energy reflection coefficients as well as energy and angular distributions of reflected H, D, and T. To account for binding effects at the target surface a planar potential is applied. This binding potential reduces the reflection below an energy of a few eV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00620463
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...