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  • Articles  (8)
  • 68.55  (8)
  • 1995-1999
  • 1985-1989  (8)
  • 1950-1954
  • 1945-1949
  • 1985  (8)
  • 1951
  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (8)
  • Sociology
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  • Articles  (8)
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Keywords
Publisher
Years
  • 1995-1999
  • 1985-1989  (8)
  • 1950-1954
  • 1945-1949
Year
Topic
  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (8)
  • Sociology
  • Physics  (8)
  • 1
    Electronic Resource
    Electronic Resource
    Rapid thermal annealing and titanium silicide formation (1985)
    Springer
    Applied physics 38 (1985), S. 23-29 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 81.10 ; 73.40 Cg
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Titanium silcides have been formed on monocrystalline (111) silicon substrates by rapid thermal annealing (RTA) of Ti layers deposited on Si at 700–800 °C for 1 to 240 s. The phase composition is dependent on the annealing temperature and time: at 700° and 750 °C for short annealing, TiSi and TiSi2 are observed. At 800 °C and by increasing the exposure time at 700 ° and 750 °C, only TiSi2 is detected. The growth of the total silicide thickness is found to be faster for RTA than for conventional furnace annealing and governed by two different mechanisms depending on the phases formed: in the range 700–750 °C, and 750–800 °C, activation-energy values of 2.6 ± 0.2 and 1.5 ±0.2 eV are found, respectively. For a thin deposited Ti layer (〈 100 nm), the whole Ti is finally transformed into TiSi2 with 20@ μω cm resistivity. For thicker Ti thicknesses, titanium oxide stops the reaction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00618722
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  • 2
    Electronic Resource
    Electronic Resource
    Theoretical and experimental investigations on the deposition rate and processes of parallel incident laser-induced CVD (1985)
    Springer
    Applied physics 38 (1985), S. 221-226 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 42.60 ; 82.50
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A theoretical analysis of and experimental observations on a parallel incident laser-induced deposition rate are reported. Our theory predicts that the maximum deposition rate depends on the photo-traveling length, the scattering cross section of the reactant gases and their partial pressure. This result is applied to SiO2 deposition using monosilane and nitrous oxide for reactant gases, and is compared with experimental results. We show that the deposition rate of SiO2 films as a function of the incident light power and the partial pressure of reactant gases predicted by the present theory well explains our experimental results. A supply-limitation phenomenon of the reactant gases and a method of estimating deposition efficiencies are also discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616500
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  • 3
    Electronic Resource
    Electronic Resource
    Photothermal effect contribution on film quality improvement in excimer-laser induced metal CVD (1985)
    Springer
    Applied physics 37 (1985), S. 25-30 
    Details
    ISSN: 1432-0630
    Keywords: 81.10 ; 68.55 ; 68.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract KrF excimer laser induced Cr film deposition from Cr(CO)6 has been studied. Remarkable film quality dependence on laser intensity suggested the photothermal effect contribution of intensive uv laser pulses in the CVD process. A cw Ar-ion laser light and its second harmonic light were used, to separate photochemical and photothermal effects. As a result, photoinduced surface heating has been found to be very important for obtaining good quality metallic films in KrF laser induced Cr film CVD.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617865
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  • 4
    Electronic Resource
    Electronic Resource
    Growth of molybdenum carbide particles from an amorphous phase induced by ion bombardment (1985)
    Springer
    Applied physics 38 (1985), S. 275-279 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 82.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Transmission electron microscopy and Auger electron spectroscopy revealed that the Ar+-ion bombardment of a carbon-containing molybdenum film with an amorphous structure led to the growth of carbide particles smaller than ∼30nm in diameter. The particles possessed an fcc structure and were distributed like islands in the film. Electron diffraction analysis identified them withβ-MoC0.75, a high-temperature phase of MoC0.75. Presumably, the heating effect of the ion beam was responsible for forming and stabilizing the particles.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616063
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  • 5
    Electronic Resource
    Electronic Resource
    Ion-beam induced mixing in Al-Ni (1985)
    Springer
    Applied physics 36 (1985), S. 103-111 
    Details
    ISSN: 1432-0630
    Keywords: 61.80 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Ion beam induced mixing of Al-Ni has been studied using N 2 + and Ar+ bombardment. High dose (4×1017 ions cm−2) nitrogen bombardment was found to cause blister formation with no unambiguous evidence of mixing. However, using argon ions at elevated substrate temperatures (400–450 °C) led to extensive mixing of 2000 Å Al layers on Ni. The mixing mechanism is considered to be point defect mediated radiation enhanced diffusion with a possible contribution from cascade mixing and interfacial oxide layer breakdown during the initial stages of treatment.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00620616
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  • 6
    Electronic Resource
    Electronic Resource
    Hydrogen sulphide doping of GaAs and AlxGa1−xAs grown by molecular beam epitaxy (MBE) (1985)
    Springer
    Applied physics 36 (1985), S. 147-151 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract H2S gas has been used during molecular beam epitaxy (MBE) growth of GaAs and Al x Ga1−x As as sulphur vector forn-type doping. Doping efficiencies are less than 10−3 at usual growth temperatures, and are limited by an incorporation competitive surface process, probably 2Ga+H2S→Ga2S+H2. In AlxGa1−x As forx≧0.2 the doping efficiency is further reduced by carrier freeze-out at deep levels. Measured thermal activation energies depend on growth conditions and remain relatively low even up to the direct-indirect bandgap crossover for substrate temperatures in the 585–645
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00624935
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  • 7
    Electronic Resource
    Electronic Resource
    On the formation of periodic structures on solid surfaces (1985)
    Springer
    Applied physics 36 (1985), S. 205-207 
    Details
    ISSN: 1432-0630
    Keywords: 42.40 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A model is proposed to explain the formation of periodic structures produced on solid surfaces by laser radiation. The model gives rise to a system of two linear integrodifferential equations with difference kernels for temperature correction due to the specific absorption of electromagnetic energy at a certain solid surface profile and at a surface profile formed due to heat expansion resulting from temperature correction. The solution of this system reveals, that, first, periodic structures are formed as a result of the propagation of “periodic” profiles generated from a certain original non-periodic profile over the body surface. Second, the amplitudes of these waves grow with time only for a laser density exceeding certain critical value, i.e. the formation of periodic structures is a threshold effect relative to the laser density.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616553
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  • 8
    Electronic Resource
    Electronic Resource
    SEM, SAED, and TEM investigations of domain structure in PZT ceramics at morphotropic phase boundary (1985)
    Springer
    Applied physics 37 (1985), S. 237-242 
    Details
    ISSN: 1432-0630
    Keywords: 61.10 ; 64 ; 68.55 ; 77.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract SEM investigations of ferroelectric domain structure in PbZr0.53Ti0.47O3 are consistent with a model of spatial domain configuration for the piezoelectric ceramics previously proposed for BaTiO3. TEM and SAED results revealed not only the twinning relation of adjacent tetragonal 90° domains but also the simultaneous presence of the ferroelectric rhombohedral phase. A succession model of ferroelectric domains T1RT2RT1... which needs a smaller energy for the rotation of the polarization vector due to the coexistence of a R domain between the two T 90° domains is proposed. This model is also confirmed by the estimated value of elastically stored energy in the mixed wall and by the dependence upon the sintering temperature of T and R unit cell distortions previously measured by x-ray diffraction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00614823
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