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  • Articles  (10)
  • 81.40  (10)
  • 2015-2019
  • 1990-1994  (10)
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  • 1992  (10)
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  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (10)
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  • Articles  (10)
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  • 2015-2019
  • 1990-1994  (10)
  • 1945-1949
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  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (10)
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  • Physics  (10)
  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 54 (1992), S. 317-326 
    ISSN: 1432-0630
    Keywords: 81.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A low-order model of rapid thermal processing (RTP) of semiconductor wafers is derived. The first-principles nonlinear model describes the static and dynamic thermal behavior of a wafer with approximate spatial temperature uniformity undergoing rapid heating and cooling in a multilamp RTP chamber. The model is verified experimentally for a range of operating temperatures from 400° C to 900° C and pressures of 1 Torr and 1 atmosphere in an inert N2 environment. Theoretical predictions suggest model validity over a still wider range of operating conditions. One advantage of the low-order model over previous high-order and statistical models is that the proposed model contains a small number of fundamental parameters and functions that, if necessary, are easily identifiable. Furthermore, because of reduced computational complexity, the low-order model can be used in real-time predictive applications including signal processing and process control design. In studying and verifying the model, the dynamic behavior of a semiconductor wafer undergoing rapid temperature changes is characterized. Close comparison between theory and experiment in terms of the wafer eigenvalue and dc gain is demonstrated; the strong nonlinear effects of temperature are shown. Convective heat transfer losses are also examined and are shown to increase with radial position on the wafer.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 54 (1992), S. 311-316 
    ISSN: 1432-0630
    Keywords: 68.45 ; 81.40 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Experimental results are presented on the Si damage induced by a copper-vapor laser beam under a layer of chemically neutral liquid (H2O, DMFA, DMSO). The lateral dimensions of the damaged area coincide with those of laser beam, while the depth of the damaged area increases with time. The rate of hole formation may be as high as 75 μm/s. The qualitative interpretation of the results is given on the basis of laser generation of vacancies, and their combination and redistribution in the field of the inhomogeneous mechanical strains due to multiple heating/cooling cycles of the surface of the semiconductor.
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  • 3
    ISSN: 1432-0630
    Keywords: 81.40 ; 61.70 ; 61.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Extended lattice damage created by implantation of 3.6 MeV Au2+ ions has been investigated using transmission electron microscopy (TEM) and Rutherford backscattering spectrometry (RBS). Systematic observations of damage for Au2+ ions implanted with varying doses into silicon are explained in terms of a model. The origin of two distinct bands of extended defects is explained in terms of annealing of the central region of implant-damage, during the course of the implantation. Two distinct bands of Au precipitates are observed in high-dose implanted samples. This observation is explained as being the result, in part, of segregation of gold in front of a recrystallizing front, and in part, of gettering of dopant-atoms to nodes in a dislocation network. The network arises as a result of dynamic annealing of damaged crystalline silicon.
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  • 4
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 54 (1992), S. 363-368 
    ISSN: 1432-0630
    Keywords: 42.60 ; 42.70 ; 81.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Ablation of fused silica using standard excimer lasers (20–30 ns pulse duration at 193, 248, and 308 nm) and a short pulse laser system (500 fs at 248 nm) is reported. Ablation rates range from several hundred nm/pulse (193 nm or fs-laser) up to about 6 μm/pulse (308 nm). The performance of the ablation is found to depend not only on wavelength and pulse duration but also on the existing or laser induced surface quality (e.g., roughness) of the material. Special ablation phenomena are observed. At 193 nm and moderate fluence (3 J/cm2) ablation takes place at the rear side of a plate without affecting the front side, whereas at higher fluence normal ablation at the front side occurs. At 248 nm (standard excimer) the existence of two consecutive ablation phases is observed: smooth ablation at low rate is followed by explosive ablation at high rate. Using fs-pulses smooth shaped holes are formed during the first pulses, whereas high pulse numbers cause the development of a ripple structure in the ablation craters. The results lead to the conclusion that two different ablation mechanisms are involved: the first is based on two photon bulk absorption, the second on controlled surface damage in relation with (partially laser induced) singularity conditions at the surface.
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  • 5
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 55 (1992), S. 161-166 
    ISSN: 1432-0630
    Keywords: 61.70 ; 81.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The electron-deformation-thermal theory of pulsed laser-induced point defect generation in strongly absorbing semiconductors is developed. The theoretical results obtained are in a good agreement with the results of experiments carried out in Ge, GaAs, and GaP.
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  • 6
    ISSN: 1432-0630
    Keywords: 74.70 ; 81.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Improved superconducting properties were observed in melt-textured YBa2Cu3O7-y ceramic material. The inductive current density has a small field dependence up to 5.5 T over a wide temperature range. The field and temperature dependences of the magnetic properties are similar to the behavior found in single crystals. Values of the intragrain critical current density in melt-texture samples have the same order of magnitude as in single crystals. The reduced porosity and improved grain alignment help to probe intrinsic physical properties that depend on crystallographic orientation. Thus experiments similar to those involving single crystals are possible. The modified Bean critical state model applied to single crystals can also be used in these melt-textured samples. Thus, it is possible to use melt-textured samples in some basic research which originally required the use of single crystals.
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  • 7
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 55 (1992), S. 561-565 
    ISSN: 1432-0630
    Keywords: 81.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract In the present paper the mixing of thin metal layers on silicon or copper substrates induced by HIPIB (High Intensituy Pulsed Ion Beams) was investigated using a device which delivers mainly protons with a maximum ion energy of E 0=250 keV, a pulse length of τ=50 ns, and an energy density per pulse of 3 J/cm2. The temperature distribution in the samples which was evaluated by solving the one-dimensional heat-flow equation indicates that 1 μm layers are heated well above the melting point. The samples were analysed by RBS (Rutherford Backscattering Spectrometry), SNMS (Sputtered Neutral Mass Spectrometry), X-ray diffraction and a microprobe. If the surface tension of the molten layer is larger than the one of the substrate, the layer material is splashed off. Chromium layers on copper are completely mixed after irradiation by a few shots and a considerable hardening of the surface is observed.
    Type of Medium: Electronic Resource
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  • 8
    ISSN: 1432-0630
    Keywords: 78.65 ; 68.55 ; 81.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The optical and structural properties of films deposited from laser sintered Zirconia (ZrO2), Hafnia (HfO2), and Yttria (Y2O3) and from the commercially available (unprocessed material) Zirconia, Hafnia and Yttria, were studied and compared. All the films had low absorption. Films deposited from the laser sintered material had very low optical inhomogeneity. ZrO2 films showed negative inhomogeneity for films deposited from the unprocessed material. The refractive index increased for ZrO2 films deposited from the laser sintered material. HfO2 and Y2O3 films showed positive inhomogeneity when deposited from the unprocessed material. The refractive index of the films of these materials decreased when deposited from the laser sintered material. The thin films of ZrO2 and Y2O3 prepared from laser sintered material had stable monoclinic and cubic structures respectively while HfO2 films were found to be amorphous.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 55 (1992), S. 387-390 
    ISSN: 1432-0630
    Keywords: 61.40 ; 81.10 ; 81.40 ; 82.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Experimental results are presented on the maskless metallization of the surface of polyimides. In a certain range of laser parameters (Ar+ and copper-vapor lasers) the surface of polyimides irradiated in the air becomes catalytically active with respect to copper deposition from the solution for electroless copper plating. Copper lines 50–100 μm wide are deposited on the Kapton films with good adherence.
    Type of Medium: Electronic Resource
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  • 10
    ISSN: 1432-0630
    Keywords: 81.40 ; 82.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Laser-induced direct writing of silver lines on a ferrite surface from a silver acetate (CH3COOAg) thin layer has been investigated. The deposition is a thermochemical process and the threshold temperature for thermal decomposition of CH3COOAg is about 380° C. About 100% of Ag in the deposited lines has been achieved. The width of the deposited Ag-lines increased with the increase in laser power, and it can be accurately estimated by the temperature profile induced by laser irradiation within the power region below the melting point of ferrite. A line thickness of micron order can be formed both on a ferrite surface and on a deposited SiO2 surface, whereas the line width decreased with the increase in beam dwell time due to the vaporization of both CH3COOAg precursor and deposited Ag material.
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