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  • Articles  (8)
  • 68.55  (8)
  • Springer  (8)
  • American Meteorological Society
  • American Physical Society (APS)
  • Blackwell Publishing Ltd
  • Cambridge University Press
  • De Gruyter
  • International Union of Crystallography
  • Oxford University Press
  • Society of Exploration Geophysicists
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  • 2000-2004
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  • 1980-1984  (8)
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  • 1984  (8)
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  • 1937
  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (8)
  • Computer Science
  • Geosciences
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  • Articles  (8)
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  • Springer  (8)
  • American Meteorological Society
  • American Physical Society (APS)
  • Blackwell Publishing Ltd
  • Cambridge University Press
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  • 2000-2004
  • 1995-1999
  • 1980-1984  (8)
  • 1955-1959
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  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (8)
  • Computer Science
  • Geosciences
  • Physics  (8)
  • 1
    Electronic Resource
    Electronic Resource
    Formation of a metallic layer from individual atoms (1984)
    Springer
    Applied physics 33 (1984), S. 213-225 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Adsorption of copper, gold and beryllium on (110), (100), and (211) single-crystal planes of tungsten leads to essentially different work-function changes. It is known from numerous investigations of alkali-metal adsorption on metal substrates that the work-function variation reflects the electronic processes occurring during the formation of the adlayer. It is obvious that copper, gold and beryllium adsorption is accompanied by a wide variety of physical processes different from those appearing in alkali-metal adsorption. The existing experimental data concerning work-function changes induced by copper, gold and beryllium adsorption are compiled. A model is developed, which may explain these changes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00614661
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  • 2
    Electronic Resource
    Electronic Resource
    TEM image contrast from antiphase domains in GaAs: Ge(001) grown by MBE (1984)
    Springer
    Applied physics 34 (1984), S. 231-236 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 61.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Antiphase domains occur in thin GaAs epitaxial films grown on Ge(001) by molecular beam epitaxy. The domains have been imaged by transmission electron microscopy using 200-type reflections in dark field. The carefully chosen imaging conditions with convergent illumination ensure that doubly diffracted beams from a pair of first order Laue zone discs contribute to the singly diffracted 200-type beams. The three Bragg reflections may add in or out of phase to give domains in either light or dark contrast depending on their polarity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616577
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  • 3
    Electronic Resource
    Electronic Resource
    Characterisation of the interface between GaAs: Cr substrates andn-type epitaxial GaAs layers by infrared multiple interference analysis (1984)
    Springer
    Applied physics 35 (1984), S. 27-34 
    Details
    ISSN: 1432-0630
    Keywords: 07.65G ; 42.85 ; 68.48 ; 68.55 ; 73.60F ; 78.30 ; 78.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Infrared reflectivity measurements on vapour phase grownn-GaAs epitaxial layers (n=7×1016...5×1018 cm−3) deposited on semi-insulating GaAs:Cr substrates show interference structures whose strength cannot be explained by the interference pattern of a simple two layer system. Assuming a third very thin (0.4 μm) interfacial layer it is possible to describe the experimental results. For Te doping the carrier concentration in the interfacial film is higher than in the volume of the epitaxial layer; it is lower for Sn doping. The results of this nondestructive optical method were confirmed by conductivity measurements while etching the sample. The origin of the interfacial layer is discussed in terms of non-steady state conditions at the beginning of the epitaxial growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00620296
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  • 4
    Electronic Resource
    Electronic Resource
    Dynamic RHEED observations of the MBE growth of GaAs (1984)
    Springer
    Applied physics 34 (1984), S. 179-184 
    Details
    ISSN: 1432-0630
    Keywords: 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Detailed measurements have been made of the specular beam intensity in RHEED patterns from static and growing GaAs surfaces. The basic parameters investigated were substrate temperature and electron beam azimuth. The results have provided further understanding of growth dynamics and surface disorder, respectively. There is a significant trend away from two-dimensional growth at the higher temperatures, which also correspond to more Ga-rich surface structures. Conversely, surface disorder is apparently greater during growth at the lower temperatures, where the structure is As-rich. The static As-stable 2×4 surface is, however, the most ordered and the most closely two-dimensional. It has also been shown that ordered, two-dimensional growth can be initiated from excess Ga adatom populations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616915
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  • 5
    Electronic Resource
    Electronic Resource
    Controlled doping of rf sputtered germanium films (1984)
    Springer
    Applied physics 34 (1984), S. 117-121 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Germanium films have been rf sputter deposited on a variety of substrates. A new techniques has been developed to control doping concentrations of the films at predetermined levels for bothp-type as well asn-type films. The hole concentrations of these films could be varied from 1015 to 2×1018/cm3 while the electron concentrations could be varied from 1015 to 5×1017/cm3 using this technique. Transmission electron microscope studies have been made to study the crystalline quality of the films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00614763
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  • 6
    Electronic Resource
    Electronic Resource
    Formation of palladium silicide by rapid thermal annealing (1984)
    Springer
    Applied physics 35 (1984), S. 141-144 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 81.10
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The formation of palladium silicide Pd2Si by rapid thermal annealing of Pd layers on silicon has been studied as a function of annealing time (1–60s) in the temperature range 350–500 °C. It is shown that the results found for conventional furnace annealing (long duration, low temperature) can be extrapolated for rapid thermal annealing (shorter time, higher temperature) when taking into account the exact time dependence of the short temperature cycle. The growth rate is essentially diffusion limited and the activation energy is close to 1.1±0.1 eV. Silicide resistivity of about 30–40 Ω cm was obtained for 200–400 nm thick Pd2Si layers formed at 400 °C for a few seconds.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616966
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  • 7
    Electronic Resource
    Electronic Resource
    Vanadium oxidation as a result of cw CO2 laser irradiation in atmospheric air (1984)
    Springer
    Applied physics 35 (1984), S. 103-108 
    Details
    ISSN: 1432-0630
    Keywords: 42.60 ; 68.55 ; 61.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract New results are reported concerning the vanadium oxidation by cw CO2 laser irradiation in air at atmospheric pressure. Particular emphasis is paid both to the initial stage and the development of the oxidation process under the action of the laser radiation. Some aspects are finally discussed concerning the quantitative theoretical interpretation of the experimentally recorded data.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00620638
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  • 8
    Electronic Resource
    Electronic Resource
    Changes produced in the electrical resistivity of ErH2 thin films when converted to ErH3 due to hydrogen treatment (1984)
    Springer
    Applied physics 35 (1984), S. 263-265 
    Details
    ISSN: 1432-0630
    Keywords: 73.60 ; 68.55 ; 81.10
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The resistivity of thin films (80–200 Å) of ErH2 increases sharply when heated for 2 h at 300 °C in vacuum in the presence of hydrogen gas at ∼ 10−2 Torr. This confirms that the films, originally metallic conductor, have become converted to semiconducting ErH3 which is in conformity with the structural studies. The negative values of TCR also indicate the semiconducting nature of the hydrogen treated films. Activation energies of the films have been evaluated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617177
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