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  • Articles  (6)
  • 61.70  (6)
  • Springer  (6)
  • American Geophysical Union
  • American Meteorological Society
  • American Physical Society (APS)
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  • Cambridge University Press
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  • 1984  (6)
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  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (6)
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  • Geosciences
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  • Articles  (6)
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  • Springer  (6)
  • American Geophysical Union
  • American Meteorological Society
  • American Physical Society (APS)
  • Blackwell Publishing Ltd
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  • 2000-2004
  • 1995-1999
  • 1980-1984  (6)
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  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (6)
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  • Physics  (7)
  • 1
    Electronic Resource
    Electronic Resource
    Diffusion of gold in silicon studied by means of neutron-activation analysis and spreading-resistance measurements (1984)
    Springer
    Applied physics 33 (1984), S. 133-140 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 ; 66.30 ; 85.3085.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract In- and out-diffusion of gold in silicon were investigated with the aid of a neutronactivation analysis in combination with mechanical sectioning or by the spreadingresistance technique. In-diffusion profiles in the range 1371–1073 K show that Au diffuses in Si mainly via the so-called kick-out mechanism. From the Au diffusion and solubility measurements the interstitialcy contributionD I SD to the Si self-diffusion coefficient was determined, which shows that the self-diffusion occurs to a considerable extent via selfinterstitials. Out-diffusion profiles at 1173 K were measured on wafers homogeneously supersaturated with Au. The observed decrease of the electrical activity of Au in the bulk indicates that during the out-diffusion anneal the majority of Au atoms originally dissolved substitutionally changes its configuration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617619
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  • 2
    Electronic Resource
    Electronic Resource
    TEM image contrast from antiphase domains in GaAs: Ge(001) grown by MBE (1984)
    Springer
    Applied physics 34 (1984), S. 231-236 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 61.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Antiphase domains occur in thin GaAs epitaxial films grown on Ge(001) by molecular beam epitaxy. The domains have been imaged by transmission electron microscopy using 200-type reflections in dark field. The carefully chosen imaging conditions with convergent illumination ensure that doubly diffracted beams from a pair of first order Laue zone discs contribute to the singly diffracted 200-type beams. The three Bragg reflections may add in or out of phase to give domains in either light or dark contrast depending on their polarity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616577
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  • 3
    Electronic Resource
    Electronic Resource
    Au gettering by Ne and Ar implantation in silicon (1984)
    Springer
    Applied physics 35 (1984), S. 119-124 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 ; 66 ; 85.30 ; 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The gettering efficiency for Au induced by Ne+ and Ar+ implantation has been studied. The depth distribution of gettered Au as a function of annealing temperature and dose of implanted Ne+ and Ar+ ions are presented. The experiment shows that the maximum efficiency of gettering occurs when the implantation doses are comparable with amorphization dose.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00620641
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  • 4
    Electronic Resource
    Electronic Resource
    Disclosure of defects in YAG crystals by the thermoluminescence method (1984)
    Springer
    Applied physics 35 (1984), S. 249-253 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 ; 61.80 ; 71.35 ; 78.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The topograms revealing the anisotropic distribution of defects in the volume of monocrystalline YAG samples have been obtained by the thermoluminescence (TL) technique. It has also been shown that the anisotropic distribution of the lattice defects affects strongly the shape of the TL curves. The greatest changes in the TL intensity were observed in the areas of the samples distributed symmetrically every 120°. It was noted that the selective distribution of the TL intensity is caused mainly by the presence of the (211) facets as well as growth striations formed during the growth process. The groups of lines observed in the TL spectrum have been ascribed to the Tb3+ ions, excited owing to the radiationless energy transfer from the bound exciton states (BES).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617175
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  • 5
    Electronic Resource
    Electronic Resource
    Time-resolved defect production and annealing during electron-beam processing of silicon (1984)
    Springer
    Applied physics 33 (1984), S. 251-254 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 ; 61.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract In (100)p-Si radiation damage was produced by implanting B+ ions with an energy of 80keV, 90keV and 1.6MeV. The specimens were annealed by scanned electronbeam irradiation (20keV, 1–2mAcm−2). The formation, evolution and annihilation of defects during the irradiation process were investigated by employing DLTS and RBS measuring techniques. The results show a minimum of defect concentration and an efficiency of the electrical activation of B higher than 80% at an annealing time of 4.5 s. For irradiation times longer than 5 s it becomes evident, that the crystal surface acts as source of defects and contributes to an increase in defect concentration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00614667
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  • 6
    Electronic Resource
    Electronic Resource
    X-ray line profile analysis of dislocations and stacking faults in deformed copper (1984)
    Springer
    Applied physics 35 (1984), S. 109-114 
    Details
    ISSN: 1432-0630
    Keywords: 61.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Dislocation configurations and stacking faults in commercial copper rods after 20% and 70% cold-rolling, fatigue and unidirectional tension here studied by x-ray line profile analysis. The analysis of dislocation is based on the Stokes method, the Warren-Averbach analysis and the Wilkens theory for Gaussian or mixed type of strain broadening profiles. For the Cauchy type the range of stress field of dislocations is small, and a model of regular distribution of dislocation dipoles is proposed instead of the Wilkens model of a restrictedly random distribution of dislocations. Due to the obvious texture in all four kinds of deformed samples, the possible glide systems are obtained by using a biaxial stress system. The analysis of stacking faults is based on theories of Patterson, Warren, and Wagner by measuring profile peak shifts, asymmetry and broadening. The broadening due to perfect dislocations and stacking faults can easily be separated. The configuration parameters and density of dislocations, the probabilities of intrinsic, extrinsic and twin stacking faults were deduced in all cases.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00620639
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