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  • Articles  (22)
  • 68.55  (22)
  • Springer  (22)
  • American Meteorological Society
  • American Physical Society (APS)
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  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (22)
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  • Articles  (22)
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  • Springer  (22)
  • American Meteorological Society
  • American Physical Society (APS)
  • Blackwell Publishing Ltd
  • Cambridge University Press
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  • 2000-2004
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  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (22)
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  • Physics  (22)
  • 1
    Electronic Resource
    Electronic Resource
    Formation of a metallic layer from individual atoms (1984)
    Springer
    Applied physics 33 (1984), S. 213-225 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Adsorption of copper, gold and beryllium on (110), (100), and (211) single-crystal planes of tungsten leads to essentially different work-function changes. It is known from numerous investigations of alkali-metal adsorption on metal substrates that the work-function variation reflects the electronic processes occurring during the formation of the adlayer. It is obvious that copper, gold and beryllium adsorption is accompanied by a wide variety of physical processes different from those appearing in alkali-metal adsorption. The existing experimental data concerning work-function changes induced by copper, gold and beryllium adsorption are compiled. A model is developed, which may explain these changes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00614661
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  • 2
    Electronic Resource
    Electronic Resource
    TEM image contrast from antiphase domains in GaAs: Ge(001) grown by MBE (1984)
    Springer
    Applied physics 34 (1984), S. 231-236 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 61.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Antiphase domains occur in thin GaAs epitaxial films grown on Ge(001) by molecular beam epitaxy. The domains have been imaged by transmission electron microscopy using 200-type reflections in dark field. The carefully chosen imaging conditions with convergent illumination ensure that doubly diffracted beams from a pair of first order Laue zone discs contribute to the singly diffracted 200-type beams. The three Bragg reflections may add in or out of phase to give domains in either light or dark contrast depending on their polarity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616577
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  • 3
    Electronic Resource
    Electronic Resource
    Characterisation of the interface between GaAs: Cr substrates andn-type epitaxial GaAs layers by infrared multiple interference analysis (1984)
    Springer
    Applied physics 35 (1984), S. 27-34 
    Details
    ISSN: 1432-0630
    Keywords: 07.65G ; 42.85 ; 68.48 ; 68.55 ; 73.60F ; 78.30 ; 78.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Infrared reflectivity measurements on vapour phase grownn-GaAs epitaxial layers (n=7×1016...5×1018 cm−3) deposited on semi-insulating GaAs:Cr substrates show interference structures whose strength cannot be explained by the interference pattern of a simple two layer system. Assuming a third very thin (0.4 μm) interfacial layer it is possible to describe the experimental results. For Te doping the carrier concentration in the interfacial film is higher than in the volume of the epitaxial layer; it is lower for Sn doping. The results of this nondestructive optical method were confirmed by conductivity measurements while etching the sample. The origin of the interfacial layer is discussed in terms of non-steady state conditions at the beginning of the epitaxial growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00620296
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  • 4
    Electronic Resource
    Electronic Resource
    A scanning tunneling microscopy study of the adsorption of Xe on Pt(111) up to one monolayer (1995)
    Springer
    Applied physics 60 (1995), S. 147-153 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 61.16 ; 34.00
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The adsorption of Xe on Pt(111) has been investigated from the arrival of the very first atoms up to completion of the monolayer using a variable-temperature Scanning Tunneling Microscope (STM). Surprisingly, in the initial stages of the adsorption Xe preferentially binds to a low coordination site, theupper edge of the platinum steps. The strong binding to these sites leads to a local repulsive interaction with further Xe atoms. Therefore, the Xe atoms located at the upper edge of the steps do not serve as nuclei for 2D Xe islands, which, instead, form on the terraces and at thelower edges of the platinum steps. Only during completion of the monolayer do these islands make contact with the atoms adsorbed at the beginning in the upper-edge positions. The full monolayer exhibits the Hexagonal Incommensurate Rotated (HIR) phase already known from earlier helium-diffraction experiments.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01538240
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  • 5
    Electronic Resource
    Electronic Resource
    Optical second-harmonic generation by supported metal clusters: Size and shape effects (1995)
    Springer
    Applied physics 60 (1995), S. 607-612 
    Details
    ISSN: 1432-0630
    Keywords: 42.65 ; 68.55 ; 36.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Optical Second Harmonic Generation (SHG) by metal clusters has been investigated. For this purpose clusters were generated by the deposition and nucleation of metal atoms on a LiF(100) single crystal surface under ultrahigh vacuum conditions. The size and shape of the metal particles was characterized by optical transmission spectroscopy. The SHG intensity was detected in situ as a function of cluster size during the nucleation. Fundamental wavelengths of λ=1064 and 532 nm were used and the SHG signal was measured for different polarization combinations of the incident and registered light. SH radiation is detectable for particles as small as approximately 1 nm. The signal grows monotonically as a function of particle size, passes a maximum and finally drops off. This behavior is discussed in terms of resonant enhancement of the signal by surface plasmon excitation and changes ofχ (2) as a function of particle size and shape. In further experiments the chemisorption of oxygen on the surface of the metal particles was studied. The SH signal decreases as a function of oxygen coverage and amounts to only about 15% of the initial value upon chemisorption of one monolayer. This indicates that the SH signal originates almost exclusively from the surface of the clean clusters and that higher order bulk contributions are negligible.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01538536
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  • 6
    Electronic Resource
    Electronic Resource
    A slow positron lifetime study of the annealing behaviour of an amorphous silicon layer grown by MBE (1995)
    Springer
    Applied physics 61 (1995), S. 71-74 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 78.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We have studied MBE grown amorphous silicon, which was recrystallized at different temperatures for one hour, with a pulsed positron beam. A positron lifetime of 538±10 ps in the as-grown state is attributed to microvoids containing at least 10 vacancies. An incompletely recrystallized sample annealed at 500°C shows an additional long lifetime from ortho-positronium (o-Ps) pick-off annihilation. The o-Ps component disappears for samples, recrystallized at 700°C and above, and the defect lifetime steadily decreases with higher annealing temperature until a value of 310 ps is reached for the layer annealed at 1200°C. This value is explained by positron trapping at dislocations or small vacancy defects stabilized by dislocations or impurities.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01538214
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  • 7
    Electronic Resource
    Electronic Resource
    Mechanical and elastic properties of amorphous hydrogenated silicon films studied by broadband surface acoustic wave spectroscopy (1995)
    Springer
    Applied physics 61 (1995), S. 269-276 
    Details
    ISSN: 1432-0630
    Keywords: 62.00 ; 42.00 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Mechanical and elastic properties of a-Si∶H films were measured by broadband Surface Acoustic Wave Spectroscopy (SAWS). In the frequency range achieved, the SAW dispersion curves extend to 300 MHz, which allowed the density, Young's modulus, and Poisson's ratio to be evaluated for films grown by laser CVD or plasma CVD with different hydrogen concentrations. The films deposited by either method have the best mechanical and elastic properties. at a hydrogen concentration of about 10 at. %. For this material, a density of (2300±20) kg/m3 and Young's modulus of (134±5) GPa was determined. The network structures of amorphous silicon are discussed by applying the constraint-counting model to estimate the mean coordination number.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01538192
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  • 8
    Electronic Resource
    Electronic Resource
    Investigations of positron lifetimes in InP with a pulsed positron beam (1995)
    Springer
    Applied physics 61 (1995), S. 321-324 
    Details
    ISSN: 1432-0630
    Keywords: 78.70 ; 68.55 ; 61.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Indium Phosphide layers grown by gas source Molecular Beam Epitaxy, (MBE) have been studied by positron lifetime spectroscopy using the recently modified pulsed positron beam in Munich. The as-grown samples are known to be phosphorous rich and contain a high concentration of vacancy-type defects. On annealing, phosphorous precipitates are formed and the concentration of free volume defects increases. Positron lifetime spectroscopy has identified the grown in defects to be indium vacancies at a concentration around 1018cm−3. The dominant defects after annealing exhibit a positron lifetime characteristic of divacancies and are present at concentrations in excess of 5×1019cm−3.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01538197
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  • 9
    Electronic Resource
    Electronic Resource
    Laser-reactive ablation deposition of silicon-nitride films (1995)
    Springer
    Applied physics 60 (1995), S. 275-283 
    Details
    ISSN: 1432-0630
    Keywords: 42.55.Gp ; 68.55 ; 81.15.Fg
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Silicon-nitride films were deposited on silicon waters by XeCl (308 nm) excimer-laser ablation of silicon in low-pressure (0.05–5 mbar) ammonia atmospheres. Series of 10 000 pulses at the repetition rate of 8 Hz were directed to the target surface. The fluence was set at about 5 J/cm2. Pulse duration was about 30 ns. The deposited films were characterized by different techniques (X-ray diffraction, X-ray photoelectron spectroscopy, Auger electron spectroscopy, Rutherford backscattering spectrometry, scanning electron microscopy, profilometry). Silicon-nitride films with thickness close to 1 μm were obtained under specific experimental conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01538403
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  • 10
    Electronic Resource
    Electronic Resource
    Electronic properties of silicon-nitride films deposited by low-energy ion-beam bombardment (1995)
    Springer
    Applied physics 61 (1995), S. 643-644 
    Details
    ISSN: 1432-0630
    Keywords: 73.61.Ng ; 41.75 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Ultrathin silicon-nitride films have been synthesized on silicon substrates by low-energy nitrogen-ionbeam bombardment. The thicknesses of the obtained films are found to increase slightly with the duration of bombardment. Capacitance-voltage and current-voltage characteristics of silicon-nitride films prepared at different bombarding times show that the density of damages, charges in the films and interface states, the capacitance of the obtained ultrathin silicon-nitride films, the flat-band capacitance and the flat-band voltage increase with the duration of the bombarding process. The results of these analyses suggest a short bombarding processing for such a silicon-nitridation technique proposed here.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01542876
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