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  • Articles  (17)
  • photoluminescence  (17)
  • Springer  (17)
  • American Meteorological Society
  • American Physical Society (APS)
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  • International Union of Crystallography
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  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (16)
  • Physics  (2)
  • Geosciences
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  • Articles  (17)
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  • Springer  (17)
  • American Meteorological Society
  • American Physical Society (APS)
  • Elsevier
  • International Union of Crystallography
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  • 2000-2004  (17)
  • 1995-1999
  • 1980-1984
  • 1935-1939
  • 1930-1934
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  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (16)
  • Physics  (2)
  • Geosciences
  • Chemistry and Pharmacology  (18)
  • 11
    ISSN: 1573-4854
    Keywords: porous silicon ; photoluminescence ; bandgap
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract We have measured the crystallite sizes, the bandgap energies, and the photoluminescence (PL) energies in porous silicon (PSi) samples having a wide range of porosities and kept in different ambient conditions. The dependence of the bandgap energy on the crystallite size agrees with theory. For PSi samples exposed to air and containing crystallites smaller than 5 nm, the PL intensity increases by several orders of magnitude and the PL peak energy shifts from the near infrared to the red, in agreement with the quantum confinement model for the PL. For crystallites smaller than 3 nm, there is a Stokes shift between the excitonic bandgap and PL energies, which increases to several hundreds of meV for sizes ∼2 nm, indicating that, in PSi exposed to air, the PL is not due to free excitons. Before exposure to air, very high porosity PSi samples emit at shorter wavelengths than after exposure to air, suggesting that the Stokes shift depends on the surface chemistry.
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  • 12
    Electronic Resource
    Electronic Resource
    Springer
    Journal of porous materials 7 (2000), S. 93-96 
    ISSN: 1573-4854
    Keywords: porous silicon ; diffusion-limited model ; electronic structure ; photoluminescence
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract We present the results of theoretical calculations for electronic structures and photoluminescence (PL) spectrum of porous silicon whose morphology is generated through the diffusion limited aggregation process of pores in a two-dimensional honeycomb lattice. We have found that due to irregularity of the structure most of its eigenstates near band gap are localized while some of them are relatively delocalized. The localization of the eigenstates near band gap causes band-gap narrowing analogous to the quantum confinement effect. Solving the time-dependent equations for the occupation numbers of the eigenstates, we show that the present model reproduces the stretched exponential decay of PL intensity observed in the experiments.
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  • 13
    Electronic Resource
    Electronic Resource
    Springer
    Journal of porous materials 7 (2000), S. 103-106 
    ISSN: 1573-4854
    Keywords: porous silicon ; photoluminescence ; electroluminescence ; quenching
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Carrier transport and photoluminescence-quenching mechanisms in reverse-biased p-type porous silicon in contact with an aqueous electrolyte are investigated. Concerning transport mechanisms investigation, experiments are based on the study of the photo-induced current as a function of the porous layer thickness. The liquid-impregnated porous silicon skeleton is found under equipotential conditions. Transport of electrons (supplied by the substrate) in porous silicon is shown to be dominated by a diffusion process. Photoluminescence-quenching is investigated by using a reverse-biased p-type porous silicon illuminated at 365 and 809 nm simultaneoulsy. The first illumination generate photoluminescence and the second supplies carriers in the substrate. A progressive photoluminescence-quenching has been observed, under a constant applied voltage, by increasing progressively the electron concentration in the porous layer. This original experiment allows to reject the hypothesis of an electric-field-induced separation of carriers as the photoluminescence-quenching mechanism in wet porous silicon, while it strongly supports the mechanism based on Auger recombination.
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  • 14
    ISSN: 1573-4854
    Keywords: porous silicon ; photoluminescence ; optical absorption
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Using a quantum confinement based-PL model, PS was modelled as a mixture of Quantum Dots (QDs) and Quantum Wires (QWs) having different concentrations and sizes. It was shown that in the optical absorption edge the PL peak energy and the Optical Absorption (OA) exhibit the same trend, depending on preparation conditions. The spectral behaviours of PL and OA are analysed and correlated throughout the shapes and the size distribution of the nanocrystallites forming PS. Using the quantum confinement formalism, the value of the effective band-gap energy determined from the lowest PL energy almost corresponds to that estimated from the optical absorption coefficient. These results suggest that the lowest radiative transition between the valence band and the conduction band corresponds to the largest luminescent wires, and that the radiative recombination process leading to the PL emission occurs in the c-Si crystallite core.
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  • 15
    Electronic Resource
    Electronic Resource
    Springer
    Journal of porous materials 7 (2000), S. 377-379 
    ISSN: 1573-4854
    Keywords: porous silicon ; photoluminescence ; pulse anodizing
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Porous Silicon is conventionally made by dc anodisation of silicon. In this paper we have studied the luminescence of porous silicon made by pulsed anodisation as a function of duty cycle and HF concentration. Specifically we show for the first time that the luminescence can be tuned over a wide range in energy.
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  • 16
    ISSN: 1573-4854
    Keywords: porous silicon ; phenylene vinylene oligomer ; photoluminescence ; electrical conduction
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Electrical and optical properties of diode structures based on porous silicon (PS) and thin films of phenylene vinylene oligomer (PVO) have been studied. Steady-state photoluminescence spectroscopy show that the structure of the luminescence band depends on the PS morphology. We assign the observed effect to the morphology-dependent penetration of PVO material into the pores. Current-voltage characteristics of the PVO/PS diodes are studied and interpreted assuming Schottky emission and hopping transport of carriers aspossible mechanisms of d.c. electrical conduction.
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  • 17
    Electronic Resource
    Electronic Resource
    Springer
    Hyperfine interactions 129 (2000), S. 443-460 
    ISSN: 1572-9540
    Keywords: radioactivity ; photoluminescence ; silicon ; GaAs ; GaN ; CdTe
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The combination of photoluminescence spectroscopy with the radioactive isotopes 7Be, 71As, 111Ag, 111In, 191Pt, 193Au and 197Hg is shown to provide definitive proof of the chemical identity of impurities producing photoluminescence spectra in all classes of semiconductors. The isotope 71As is used to show that radioactive isotopes can provide a powerful means of producing and studying a fundamental crystal defect such as an anti-site. Factors governing the luminescence intensities which can lead to apparently anomalous results are also discussed.
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