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  • Articles  (16)
  • photoluminescence  (16)
  • Springer  (16)
  • American Meteorological Society
  • American Physical Society (APS)
  • Elsevier
  • International Union of Crystallography
  • Springer Nature
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  • 2000-2004  (16)
  • 1995-1999
  • 1980-1984
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  • 2000  (16)
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  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (16)
  • Geosciences
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  • Articles  (16)
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  • Springer  (16)
  • American Meteorological Society
  • American Physical Society (APS)
  • Elsevier
  • International Union of Crystallography
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  • 2000-2004  (16)
  • 1995-1999
  • 1980-1984
  • 1935-1939
  • 1930-1934
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  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (16)
  • Geosciences
  • Chemistry and Pharmacology  (18)
  • Physics  (2)
  • 1
    Electronic Resource
    Electronic Resource
    Photoluminescence as a Function of Aggregated Size from n-Butyl-Terminated Silicon Nanoclusters (2000)
    Springer
    Journal of cluster science 11 (2000), S. 423-431 
    Details
    ISSN: 1572-8862
    Keywords: silicon nanoparticles ; nanoclusters ; photoluminescence ; TEM
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Photoluminescence (PL) from alkyl-terminated silicon nanocrystallites as a function of size has been studied. Ultraviolet–blue luminescence (390–410 nm) is observed from as-prepared silicon nanoclusters with diameters from 3 to 8 nm. After 1 h of annealing at 162°C in 2-methoxyethyl ether (diglyme), the λ max of PL shifts from 360 to 420 nm. High-resolution transmission electron microscopy (HRTEM) images show that individual silicon nanoparticles are fused to form pairs of nanoparticles. FTIR spectra show that the alkyl groups remain on the surface of silicon nanoparticles. As the temperature is raised to 250°C for 1 h, the PL no longer shows any peak in the visible light region. TEM images show that the silicon nanoparticles are aggregated and fused uniformly in one single dimension, to form a strip, and these strips parallel each other. When the temperature is raised to 350°C these silicon nanoparticles form a large piece of silicon textile network, showing that functionalized alkyl surface does not persist above this temperature. A strong Si–O–Si asymmetric stretching vibration appears between 1000 and 1100 cm−1 at the expense of the C–H vibrational modes and there is no more change after 3 h of annealing at 250 or 350°C. These results provide strong evidence that the PL originates from quantum confinement.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1009099416195
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  • 2
    Electronic Resource
    Electronic Resource
    Laser Induced Degradation of Photoluminescence Intensity of Porous Silicon (2000)
    Springer
    Journal of porous materials 7 (2000), S. 307-310 
    Details
    ISSN: 1573-4854
    Keywords: porous silicon ; photoluminescence ; degradation
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The evolution, under vacuum, of the photoluminescence (PL) intensity of porous silicon (PS) has been studied as function of anodisation conditions, laser line and post-anodisation treatments. It was shown that the degradation of the PL intensity depends on the internal structure of PS. In particular, the degradation is important for PS layers formed essentially by crystallites having small size or where amorphous phase exists. The experimental results have been interpreted using a theoretical model, which takes into account the variation with time of the local concentration of the luminescent centers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1009613004932
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  • 3
    Electronic Resource
    Electronic Resource
    Influence of Adsorbed Water and Oxygen on the Photoluminescence and EPR of Por-TiO2 (Anatase) (2000)
    Springer
    Journal of porous materials 7 (2000), S. 389-392 
    Details
    ISSN: 1573-4854
    Keywords: porous TiO2 ; photoluminescence ; EPR ; adsorption of molecules
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The influence of adsorbed water, oxygen, air and vacuum on the photoluminescence (PL) and electron paramagnetic resonance (EPR) has been investigated in situ and quasi in situ for por-TiO2 (anatase). The broad PL signal in the visible spectral region decreases with increasing partial pressure of oxygen and vanishes at pressures higher than 1 mbar. Adsorption of water leads (i) to a fast quenching and (ii) to a subsequent increase of the PL signal. The concentration of the O2 −, O−, O3 − anion-radicals depends sensitively on the surface conditioning and on the illumination of the por-TiO2. Ti3+ centers could be observed only in vacuum treated samples. The concentrations of the Ti3+ and oxygen anion radicals are in the range of 1015 and 1017 cm−3, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1009699324013
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  • 4
    Electronic Resource
    Electronic Resource
    Electroluminescence from Porous Silicon Studied Experimentally (2000)
    Springer
    Journal of porous materials 7 (2000), S. 267-270 
    Details
    ISSN: 1573-4854
    Keywords: porous silicon ; photoluminescence ; electroluminescence ; band structure ; experimental
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Electroluminescence, photoluminescence, and current-voltage measurements have been carried out on a series of samples consisting of porous silicon on top of crystalline silicon. The electroluminescence spectral distributions are markedly shifted towards long wavelengths in comparison to those seen with photoluminescence. The results are discussed and explained in terms of the energy-band structure of porous silicon. The problem of injecting electrons as well as holes into the porous silicon layer is pointed out and discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1009675829522
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  • 5
    Electronic Resource
    Electronic Resource
    Photochemical Etching of Silicon (2000)
    Springer
    Journal of porous materials 7 (2000), S. 41-45 
    Details
    ISSN: 1573-4854
    Keywords: laser ; silicon ; photoluminescence ; quantum confinement
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Silicon that was immersed in hydrofluoric acid can be etched photochemically by laser, and it was found to produce long and regular columnar structure, if the laser power density is greater than 10 mW/mm2. Another criterion is that the laser wavelength should be at the blue end of visible spectrum. Fine wires with diameter 300–200 nm were also observed at the top of these columns. The dimension of these fine wires is near to quantum confinement dimension, thus can be taken as supporting evidence for quantum confinement. The photoluminescence spectra full width half maximum was narrower than that from porous silicon fabricated from conventional anodisation method. The narrower full width was attributed to the uniformity of the porous silicon structure. A physical model is proposed to explain the observed strong directional etching. The model showed that once the etch sites have randomly initiated, the etching rate becomes directional under the influence of laser. The intensity of laser controls the etching direction such that silicon columns are formed if the intensity of the laser is strong enough.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1009686420494
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  • 6
    Electronic Resource
    Electronic Resource
    A Systematic Study of Synchrotron Light Induced Luminescence from Porous Silicon: Implications to Morphology and Chemical Effect Dependent Electronic Behaviour (2000)
    Springer
    Journal of porous materials 7 (2000), S. 165-168 
    Details
    ISSN: 1573-4854
    Keywords: porous silicon ; photoluminescence ; synchrotron radiation
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Using synchrotron as a tunable excitation source, we have carried out a study on the photoluminescence systematics from a series of porous silicon samples prepared under different conditions, Luminescence spectra were recorded with excitation photon energies tuned to the Si L3,2 absorption edge (∼100 eV). The luminescence yield was in turn used to monitor the Si L3,2-edge absorption characteristics of porous silicon. A trend of luminescence wavelength and intensity as a function of preparation conditions emerges. Other related observations are also noted.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1009618216802
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  • 7
    Electronic Resource
    Electronic Resource
    Light Emission from Highly Reflective Porous Silicon Multilayer Structures (2000)
    Springer
    Journal of porous materials 7 (2000), S. 209-213 
    Details
    ISSN: 1573-4854
    Keywords: porous silicon ; superlattices ; photoluminescence
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Porous silicon photoluminescence and electroluminescence can be controlled by periodically modulating the material porosity to form high quality multilayer stacks and microcavities. Important issues not yet fully addressed are (a) the precise role played by this microstructuring, given that the luminescence is distributed throughout the entire structure and that the low porosity layers are highly absorbing at short wavelengths, and (b) whether the quality of such microcavities could be sufficient to support lasing. Using both experimental and theoretical techniques, the emission and reflection properties of different porous silicon single and multilayer structures have been investigated in order to understand further and exploit the nature of light propagation within them.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1009694906324
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  • 8
    Electronic Resource
    Electronic Resource
    Studies on Gold/Porous Silicon/Crystalline Silicon Junctions (2000)
    Springer
    Journal of porous materials 7 (2000), S. 299-301 
    Details
    ISSN: 1573-4854
    Keywords: porous silicon ; Schottky emission ; photoluminescence
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Electrical transport in Gold/porous silicon/crystalline silicon junctions has been studied. The junctions are found to improve when the porous silicon is exposed to a hydrogen plasma before depositing the top metal. The hydrogen passivated junctions exhibited higher current levels and emitted light at lower voltages as compared to the unhydrogenated ones. Internal photoemission measurements were carried out to investigate the gold/porous silicon barrier. The barrier height determined from the Fowler plot is independent of the top material. The temperature dependence of the barrier height is similar to that of the crystalline silicon energy gap.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1009604703115
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  • 9
    Electronic Resource
    Electronic Resource
    Electro-, Photo- and Scanning Tunneling—Luminescence Studies of Efficient Light-Emitting Porous Silicon (2000)
    Springer
    Journal of porous materials 7 (2000), S. 125-130 
    Details
    ISSN: 1573-4854
    Keywords: porous silicon ; photoluminescence ; electroluminescence ; scanning tunneling microscopy
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Porous silicon films as used in efficient blue-green electroluminescent devices (internal efficiency about 0.1%) were studied by scanning tunneling microscopy light emission spectroscopy (STMLES) as well as photoluminescence (PL) and electroluminescence (EL) spectroscopy. Areas of the n-type porous Si surfaces with small particles of about 5 nm dimensions gave STMLE, but areas with larger structures gave no emission. Clear STMLE spectra gave a peak at 630 nm, quite different from the EL peak at 500 nm. Whereas the PL peak at 700 nm was consistent with the STM indication of quantised entities, the EL seemed more readily explicable in terms of defects at the metal contact barrier.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1009627913593
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  • 10
    Electronic Resource
    Electronic Resource
    Wide Gap Hydrogenated Amorphous Silicon for Visible Light Emission (2000)
    Springer
    Journal of porous materials 7 (2000), S. 135-138 
    Details
    ISSN: 1573-4854
    Keywords: wide gap amorphous silicon ; photoluminescence ; electroluminescence
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract A series of samples of hydrogenated amorphous silicon (a-Si:H) was prepared from silane diluted highly with He by the microwave electron-cyclotron-resonance PE CVD. Such a wide gap (E≥2.0 eV) a-Si:H emits room temperature photoluminescence (PL) in the visible region. We attempt to reveal the microscopic origin of this PL by monitoring variations of PL intensity vs frequency of infrared vibrations in the vicinity of 2100 cm−1. We find that oligosilanes -(SiH2)n- act as one type of possible luminescence centres. We report also on room temperature electroluminescence (EL) from p-i-n junctions. Surprisingly, and unlike p-i-n structures from standard a-Si:H, weak EL radiation with external quantum efficiency of the order of 10−5% is emitted under reverse bias only. EL and PL emission spectra resemble strongly each other, except high energy wing of the EL spectrum. This high energy widening indicates the participation of hot electrons in the EL excitation mechanism.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1009692300389
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