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  • Artikel  (11)
  • 85.30  (11)
  • Springer  (11)
  • Blackwell Publishing Ltd
  • 1995-1999
  • 1980-1984  (11)
  • 1925-1929
  • 1997
  • 1981  (11)
  • 1928
  • Maschinenbau  (11)
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  • Artikel  (11)
Datenquelle
Schlagwörter
Verlag/Herausgeber
  • Springer  (11)
  • Blackwell Publishing Ltd
Erscheinungszeitraum
  • 1995-1999
  • 1980-1984  (11)
  • 1925-1929
Jahr
Thema
  • 1
    Digitale Medien
    Digitale Medien
    Range parameters of boron implanted into silicon (1981)
    Springer
    Applied physics 24 (1981), S. 39-43 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 34,61 ; 80 ; 85.30
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The range parameters of boron in silicon have been measured using the10B(n,α)7 Li-nuclear reaction. The results indicate that the distributions can be perfectly modeled using Pearson IV distributions with 4 moments. The range is very well described by theoretical calculations, whereas the higher moments show a strong deviation from theory.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00900395
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  • 2
    Digitale Medien
    Digitale Medien
    Free-running ruby laser annealing of boron implanted silicon (1981)
    Springer
    Applied physics 26 (1981), S. 243-246 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 61.80 ; 42.80 ; 85.30
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract An analytical treatment of the thermal phenomena during free-running ruby laser annealing of boron implanted silicon is presented. The heat equation was solved for a simplified shape of the pulse train consisting of a uniform succession of triangular spikes, identical in energy. During one spike the optical and thermal parameters of the sample were taken constant, but for each new spike, new values of these parameters were calculated taking into account their temperature dependence. Such a model predicts the melting of the top surface before the laser pulse has ended, for energy densities higher than 9×104 J/m2. RHEED confirms the presence of recristallization at about the same value of the laser-pulse energy densities.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00617845
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  • 3
    Digitale Medien
    Digitale Medien
    Arsenic-implanted polysilicon layers (1981)
    Springer
    Applied physics 24 (1981), S. 197-200 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 72.20 ; 73 ; 85.30
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The diffusion behavior of implanted arsenic in polycrystalline silicon was investigated, using backscattering and electrical measurements. The diffusion coefficient isD=8.5×10−3 exp (−2.74/kT) for polycrystalline silicon deposited on freshly-etched silicon andD=1.66 exp (−3.22/kT) for the deposition on silicon having natural oxide. At the interface to the single-crystalline silicon, a pile-up of arsenic occurs, which depends also on the surface treatment prior to the deposition of the polycrystalline silicon.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00899755
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  • 4
    Digitale Medien
    Digitale Medien
    The effect of photoelectrochemical etching on the performance of CdS based photoelectrochemical cells (1981)
    Springer
    Applied physics 25 (1981), S. 13-16 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 73 ; 85.30
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract A photoelectrochemical etching technique which was formerly used to improve the performance of CdSe1 and Cd(Se, Te)2 based photoelectrochemical cells (PEC's) was further used to improve the short-circuit current and the fill factor of CdS based PEC's. It is suggested that this method can be used to improve photovoltaic cells having CdS as one of their components.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00935385
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  • 5
    Digitale Medien
    Digitale Medien
    Oscillatory effective mass in degenerate narrow-gap semiconductors in a quantizing magnetic field (1981)
    Springer
    Applied physics 25 (1981), S. 105-108 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 85.30 ; 72.20 ; 72.15
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract An attempt is made to study the effect of a quantizing magnetic field on the effective electron mass in degeneraten-type narrow-gap semiconductors at low temperatures. It is found, takingn-Hg1−x Cd x Te as an example, that the effective electron mass shows an oscillatory magnetic-field dependence as is expected because of the dependence of the effective mass in degenerate non-parabolic bands on Fermi energy which oscillates with changing magnetic field. The amplitude of oscillations is, however, found to be significantly influenced by the alloy composition whereas the period is found to be independent of the band non-parabolicity, i.e. of the compositional parameter in ternary semiconductors.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00901280
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  • 6
    Digitale Medien
    Digitale Medien
    On the thermodynamic limit of photovoltaic energy conversion (1981)
    Springer
    Applied physics 25 (1981), S. 119-125 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 72.40 ; 85.30 ; 85.60
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract An infinite stack ofp—n junctions with smoothly varying bandgap from ∞ to 0 is considered. AnI —V characteristic is derived, which is more correct than the classical exponential characteristic. It is shown that open-circuit operation is a reversible process and leads to the Carnot efficiency, if one defines the efficiency in the way that is usual in the theory of thermodynamic engines. If instead one uses the definition of efficiency usual in photovoltaics, open-circuit mode gives rise to zero efficiency. Then operation at maximum efficiency equals operation at maximum power and is not reversible.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00901283
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  • 7
    Digitale Medien
    Digitale Medien
    Calculation of the temperature during electron pulse annealing of silicon (1981)
    Springer
    Applied physics 25 (1981), S. 139-142 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 61.80 ; 78.30 ; 85.30
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract High power density electron beams offer new opportunities for studies of epitaxial growth of semiconductor materials. Assuming that the mechanism of epitaxial growth can be understood as a surface melting followed by supercooling regrowth, the heat flow equation has been applied to calculate the temperature reached after an electron beam pulse of power density between 0.5–2 J/cm2. Comparison with laser annealing is made.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00901286
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  • 8
    Digitale Medien
    Digitale Medien
    Application of amorphous silicon field effect transistors in integrated circuits (1981)
    Springer
    Applied physics 26 (1981), S. 83-86 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 61.40 ; 85.30 ; 85.60
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The work described in this paper is concerned with the possible applications in integrated circuits of thin-film field effect transistors (FETs) made from glow discharge amorphous (a-) silicon and silicon nitride. The construction and performance of inverter circuits, employing integrated a-Si load resistors, are described in some detail. The extension of this basic circuit to NAND and NOR gates, to a bistable multivibrator and to a shift register is reported. Based on the excellent photoconductive properties of a-Si an integrated addressable photosensing element has been constructed, which could have potential applications in imaging arrays.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00616653
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  • 9
    Digitale Medien
    Digitale Medien
    Space-charge analysis for the admittance of semiconductor junctions with deep impurity levels (1981)
    Springer
    Applied physics 26 (1981), S. 191-202 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 71.55 ; 85.30
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The space charge analysis within depletion layers in semiconductors containing deep trap levels is reconsidered. A simple approach to the frequency dependence of the admittance ofp +/n junctions is properly generalized in order to deal with the effect of interface states at heterojunctions and Schottky barriers, as well as with a special case for the space distribution of the trap density. The density of interface states atp-Ge/CdS heterojunctions is so derived. Approximate analytical solutions accounting for a spatially distributed time constant are obtained for the admittance ofp +/n junctions with a single trap state. A comparison with experimental data is given and discussed.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00614756
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  • 10
    Digitale Medien
    Digitale Medien
    Effect of size quantization on the Einstein relation in ultrathin films of non-parabolic semiconductors (1981)
    Springer
    Applied physics 26 (1981), S. 165-169 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 73.60 ; 85.30
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract An attempt is made to investigate the effect of size quantization on the diffusivity-mobility ratio of the carriers in ultrathin films of semiconductors having Kane-type nonparabolic energy bands. It is shown, takingn-type InSb as an example, that the ratio oscillates both with increasing film thickness and with increasing carrier concentration under degenerate conditions and remains unaffected otherwise. The corresponding results for parabolic semiconductors are also obtained from the expressions derived.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00614751
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  • 11
    Digitale Medien
    Digitale Medien
    Application of amorphous silicon field effect transistors in addressable liquid crystal display panels (1981)
    Springer
    Applied physics 24 (1981), S. 357-362 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 61.40 ; 85.30
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract It is shown that thin-film field effect transistors (FETs) made from amorphous (a-) silicon deposited by the glow-discharge technique have considerable potential as switching elements in addressable liquid crystal display panels. The fabrication of the elements and their characteristics with steady and pulsed applied potentials are discussed in some detail. Two important points are stressed: (i) a-Si device arrays can be produced by well-established photolithographic techniques, and (ii) satisfactory operation at applied voltages below 15VV is possible. Small experimental 7×5 transistor panels have been investigated and it is shown that with the present design up to 250-way multiplexing could be achieved. The reproducibility of FET characteristics is good and in tests so far no change has been observed after more than 109 switching operations.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00899734
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