Publikationsdatum:
2011-06-10
Beschreibung:
The effect of strain accumulation in the InAs/In x Ga 1− x As quantum dots (QDs) system was studied in this work. It was found that strain in the In x Ga 1− x As layer accumulation in the QD layer. This effect resulted in a dramatic reduction of growth mode transition thickness of the QD layer. For InAs/In 0.25 Ga 0.75 As QDs, critical thickness is measured to be as low as 1.08 ML. The experimental results in this work highlight the importance of strain accumulation in the design and fabrication of QD-based devices with metamorphic buffer layer involved. Content Type Journal Article Pages 1-6 DOI 10.1007/s00339-011-6482-1 Authors Lu Wang, National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China Meicheng Li, School of Renewable Energy, North China Electric Power University, Beijing, 102206 China Wenxin Wang, National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China Haitao Tian, National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China Zhigang Xing, National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China Min Xiong, School of Material Science and Technology, Harbin Institute of Technology, Harbin, China Liancheng Zhao, School of Material Science and Technology, Harbin Institute of Technology, Harbin, China Journal Applied Physics A: Materials Science & Processing Online ISSN 1432-0630 Print ISSN 0947-8396
Print ISSN:
0947-8396
Digitale ISSN:
1432-0630
Thema:
Technik allgemein
,
Physik
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