Publication Date:
2012-09-03
Description:
Uniform InGaN nanodots were successfully grown on SiO 2 pretreated GaN surface. It was found that the InGaN nanodots were 20 nm in diameter and 5 nm in height, approximately. After the growth of two periods of InGaN/GaN quantum wells on the surface of InGaN nanodots, nanodot structure still formed in the InGaN well layer caused by the enhanced phase separation phenomenon. Dual-color emissions with different behavior were observed from photoluminescence (PL) spectrum of InGaN nanodots hybrid with InGaN/GaN quantum wells. A significant blueshift and a linewidth broadening were measured for the low-energy peak as the increase of PL excitation power, while a slight blueshift and a linewidth narrowing occurred for the high-energy peak. Accordingly, these two peaks were assigned to be from the In-rich nanodots and quantized state transition from the InGaN/GaN quantum wells with indium content, respectively. Content Type Journal Article Pages 1-5 DOI 10.1007/s00339-012-7112-2 Authors G. F. Yang, Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials and School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093 China P. Chen, Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials and School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093 China Z. G. Yu, Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials and School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093 China B. Liu, Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials and School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093 China Z. L. Xie, Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials and School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093 China X. Q. Xiu, Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials and School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093 China Z. L. Wu, Institute of Optoelectronics, Nanjing University and Yangzhou, Yangzhou, 225009 China F. Xu, Institute of Optoelectronics, Nanjing University and Yangzhou, Yangzhou, 225009 China Z. Xu, Institute of Optoelectronics, Nanjing University and Yangzhou, Yangzhou, 225009 China X. M. Hua, Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials and School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093 China P. Han, Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials and School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093 China Y. Shi, Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials and School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093 China R. Zhang, Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials and School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093 China Y. D. Zheng, Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials and School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093 China Journal Applied Physics A: Materials Science & Processing Online ISSN 1432-0630 Print ISSN 0947-8396
Print ISSN:
0947-8396
Electronic ISSN:
1432-0630
Topics:
Technology
,
Physics
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