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  • Articles  (317)
  • Institute of Electrical and Electronics Engineers (IEEE)  (317)
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  • Physics  (317)
  • Electrical Engineering, Measurement and Control Technology
  • 1
    Publication Date: 2017-03-21
    Description: The literature discussing pulse-shape discrimination (PSD) in organic scintillators dates back several decades. However, little has been written about PSD techniques that are optimized for neutron spectrum unfolding. Variation in $n$ - $gamma $ misclassification rates and in $gamma /n$ ratio of incident fields can distort the neutron pulse-height response of scintillators and these distortions can in turn cause large errors in unfolded spectra. New applications in arms-control verification call for detection of lower-energy neutrons, for which PSD is particularly problematic. In this article, we propose techniques for removing distortions on pulse-height response that result from the merging of PSD distributions in the low-pulse-height region. These techniques take advantage of the repeatable shapes of PSD distributions that are governed by the counting statistics of scintillation-photon populations. We validate the proposed techniques using accelerator-based time-of-flight measurements and then demonstrate them by unfolding the Watt spectrum from measurement with a 252 Cf neutron source.
    Print ISSN: 0018-9499
    Electronic ISSN: 1558-1578
    Topics: Energy, Environment Protection, Nuclear Power Engineering , Physics
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  • 2
    Publication Date: 2017-03-21
    Description: A discretized positioning circuit (DPC) based on a resistive network has been developed to reduce the size of a gamma-ray detection system using multi-anode photomultiplier tubes (MA-PMT) in an array, because it can drastically decrease the number of output channels. The output signal from the gamma-ray detection system is a current pulse generated in each tube that contains information about the gamma-ray energy and detecting position in the array. The output current pulse is distributed to four outputs according to the resistance ratio of the resistive network in the DPC, and the detected position is estimated using the height values of the four distributed current pulses. However, owing to parasitic capacitors of MA-PMT connected in parallel to resistors in the resistive network, the four output pulses are affected by the RC time constants. In particular, when the duration of the input signal is not long enough, the height values of the distributed pulses are reduced, and thereby the position error increases significantly. In this paper, we present a new distortion correction method that considers the pulse duration and the RC time constant. In order to correct the position error, we employed homography, which is a coordinate transformation method. The ideal grid was mapped to a new grid for the distorted position. Using this method, error correction was completely achieved, even for short current pulses.
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  • 3
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    Institute of Electrical and Electronics Engineers (IEEE)
    Publication Date: 2017-03-21
    Description: There has been increased interest in organic semiconductors over the last decade because of their unique properties. Of these, 5, 6, 11, 12-tetraphenylnaphthacene (rubrene) has generated the most interest because of its high charge carrier mobility. In this work, large single crystals with a volume of ~1 cm 3 were grown from solution by a temperature reduction technique. The faceted crystals had flat surfaces and cm-scale, visually defect-free areas suitable for physical characterization. X-ray diffraction analysis indicates that solvent does not incorporate into the crystals and photoluminescence spectra are consistent with pristine, high-crystallinity rubrene. Furthermore, the response curve to pulsed optical illumination indicates that the solution grown crystals are of similar quality to those grown by physical vapor transport, albeit larger. The good quality of these crystals in combination with the improvement of electrical contacts by application of conductive polymer on the graphite electrodes have led to the clear observation of alpha particles with these rubrene detectors. Preliminary results with a 252 Cf source generate a small signal with the rubrene detector and may demonstrate that rubrene can also be used for detecting high-energy neutrons.
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  • 4
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    Institute of Electrical and Electronics Engineers (IEEE)
    Publication Date: 2017-03-21
    Description: The conventional front-end electronics for PET imaging consist of an energy circuit and a timing circuit. A single channel in front-end electronics typically requires several amplifiers, an ADC and a TDC. In this paper, we present a novel front-end electronic design using 1-bit sigma-delta ( $boldsymbol {Sigma }$ - $boldsymbol {Delta }$ ) modulation and an FPGA. The new design requires only one analog amplifier per channel. The output of the analog amplifier is read directly by the FPGA. Both the energy and timing calculation are implemented in FPGA firmware. The scope of this paper is to introduce the novel design in detail and to evaluate its performance in energy and dark current measurements. Simulink simulations were performed to validate the design with ideal components. A one-channel prototype circuit was built to assess the design with real components. The prototype circuit was tested with different input signals, including test pulses, pulse signals from a PMT detector, DC current signals and dark current signals from an SiPM sensor. Both the simulation and experimental results show that the method is inherently stable and has excellent accuracy and linearity in energy and dark current measurements. The prototype analog board was built with discrete components cost about $ 0.5 in total. The power consumption was about 20 mW. We conclude that the new method provides a cost-efficient and power-efficient way to accurately measure the energies of analog pulses and dark currents from detectors. The timing performance of this method is currently under evaluation.
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  • 5
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    Institute of Electrical and Electronics Engineers (IEEE)
    Publication Date: 2017-08-19
    Description: Presents a listing of the editorial board, board of governors, current staff, committee members, and/or society editors for this issue of the publication.
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  • 6
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    Institute of Electrical and Electronics Engineers (IEEE)
    Publication Date: 2017-08-19
    Description: Presents the table of contents for this issue of the publication.
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  • 7
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    Institute of Electrical and Electronics Engineers (IEEE)
    Publication Date: 2017-08-19
    Description: This paper reports on in situ measurements of the linear energy transfer spectra of galactic cosmic rays and their progeny and of trapped Van Allen belt protons as recorded by a pulse height analyzer (PHA) radiation spectrometer which flew on the STS-95 DISCOVERY mission on the Hubble Orbital Systems Test cradle. The shuttle was launched on October 29, 1998 and had a mission duration of 8.5 days during the minimum phase of the solar activity cycle. The orbit of the STS-95 was about 550 km altitude and 28.5° inclination. Close agreement was seen between radiation environment model predictions and the measurements of the PHA. Agreement is obtained by considering the directionality of the radiation interacting with the shuttle structure.
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  • 8
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    Institute of Electrical and Electronics Engineers (IEEE)
    Publication Date: 2017-08-19
    Description: This paper investigates the total ionizing dose (TID) response of nanoscaled field-effect transistors (FET) made of silicon multiple-gate nanowire (NW). The NWFET architecture relies on its remarkable electrostatic properties to push “silicon”-based technologies much deeper into device scaling than present FinFETs. However, as commonly observed when a new device or technology concept is proposed, such as shallow trench isolation and silicon-on-insulator or FinFET, TID effects reveal unexpected behaviors that can permanently modify pristine device electrical characteristics. This is why this paper discusses the impact of several parameters including the NWFET design and the transistor’s type to get thorough insights into the NWFET TID behavior.
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  • 9
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    Institute of Electrical and Electronics Engineers (IEEE)
    Publication Date: 2017-08-19
    Description: This paper presents a physical investigation of the mechanisms induced by the low temperature on single-event latchup in CMOS inverters for a range of technology nodes (250 nm from Sofradir and 180 nm from IBM). For the first time, the TCAD simulations show a good agreement of latchup characteristics with the experimental measurements at cryogenic temperatures. Additionally, a more robust technology provided by Sofradir was demonstrated.
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  • 10
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    Institute of Electrical and Electronics Engineers (IEEE)
    Publication Date: 2017-08-19
    Description: Reliable estimation of logic single-event upset (SEU) cross section is becoming increasingly important for predicting the overall soft error rate. As technology scales and single-event transient (SET) pulse widths shrink to widths on the order of the setup-and-hold time of flip-flops, the probability of latching an SET as an SEU must be reevaluated. In this paper, previous assumptions about the relationship of SET pulsewidth to the probability of latching an SET are reconsidered and a model for transient latching probability has been developed for advanced technologies. A method using the improved transient latching probability and SET data is used to predict logic SEU cross section. The presented model has been used to estimate combinational logic SEU cross sections in 32-nm partially depleted silicon-on-insulator (SOI) technology given experimental heavy-ion SET data. Experimental SEU data show good agreement with the model presented in this paper.
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