Publication Date:
2015-09-11
Description:
We report the fabrication of amorphous (In x Ga 1− x ) 2 O 3 metal–semiconductor–metal ultraviolet (UV) photodetectors on glass substrate by co-sputtering. It was found that, we could change the cutoff wavelength of the fabricated photodetectors by changing the RF sputtering power of the In 2 O 3 target. With 5 V applied bias, it was found that the measured dark currents were $2times 10^{-12}$ , $1times 10^{-11}$ , and $2.3,times , 10^{-11}$ A for sample A prepared with 40 W In 2 O 3 sputtering power, sample B prepared with 50 W In 2 O 3 sputtering power, and sample C prepared with 60 W In 2 O 3 sputtering power, respectively. It was also found that the UV-to-visible rejection ratios were $3times 10^{3}$ , $5times 10^{3}$ , and $1.5times 10^{4}$ for samples A, B, and C, respectively. Furthermore, it was found that the response speeds of the fabricated devices were good.
Print ISSN:
1041-1135
Electronic ISSN:
1941-0174
Topics:
Electrical Engineering, Measurement and Control Technology
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