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A GaN-on-Si quasi-vertical Schottky barrier diode with enhanced performance using fluorine ion-implanted field rings (2021)

Chen, Jiabo ; Song, Xiufeng ; Liu, Zhihong ; [et al.]

Institute of Physics

In: Applied Physics Express. 2021; 14(11): 116504. Published 2021 Oct 29. doi: 10.35848/1882-0786/ac2e9c.

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Publication Date: 2021-10-29

Print ISSN: 1882-0778

Electronic ISSN: 1882-0786

Topics: Physics

Published by Institute of Physics

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Fabrication of GaN nanowires containing n+-doped top layer by wet processes using electrodeless photo-assisted electrochemical etching and alkaline solution treatment (2021)

Shimauchi, Michihito ; Miwa, Kazuki ; Toguchi, Masachika ; [et al.]

Institute of Physics

In: Applied Physics Express. 2021; 14(11): 111003. Published 2021 Oct 29. doi: 10.35848/1882-0786/ac2d45.

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Publication Date: 2021-10-29

Print ISSN: 1882-0778

Electronic ISSN: 1882-0786

Topics: Physics

Published by Institute of Physics

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Improved field-effect mobility in transfer-free graphene films synthesized via the metal agglomeration technique using high-crystallinity Ni catalyst films (2021)

Kubo, Toshiharu ; Takahashi, Akira ; Miyoshi, Makoto ; [et al.]

Institute of Physics

In: Applied Physics Express. 2021; 14(11): 116503. Published 2021 Oct 29. doi: 10.35848/1882-0786/ac30ed.

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Publication Date: 2021-10-29

Print ISSN: 1882-0778

Electronic ISSN: 1882-0786

Topics: Physics

Published by Institute of Physics

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Stepped acoustic metasurface with simultaneous modulations of phase and amplitude (2021)

li, pan ; Du, Qiujiao ; Xu, Zhihong ; [et al.]

Institute of Physics

In: Applied Physics Express. 2021; Published 2021 Oct 29. doi: 10.35848/1882-0786/ac34a4. [early online release]

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Publication Date: 2021-10-29

Print ISSN: 1882-0778

Electronic ISSN: 1882-0786

Topics: Physics

Published by Institute of Physics

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