ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • Articles  (70)
  • 68.55  (70)
  • Springer  (70)
  • Cambridge University Press
  • Molecular Diversity Preservation International
  • Nature Publishing Group
  • 2015-2019
  • 2010-2014
  • 1990-1994  (63)
  • 1975-1979  (7)
  • 1965-1969
  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (70)
  • Philosophy
  • Education
  • Geosciences
Collection
  • Articles  (70)
Source
Keywords
Publisher
  • Springer  (70)
  • Cambridge University Press
  • Molecular Diversity Preservation International
  • Nature Publishing Group
Years
Year
Topic
  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (70)
  • Philosophy
  • Education
  • Geosciences
  • Physics  (70)
  • 1
    Electronic Resource
    Electronic Resource
    Improvedp/n junctions in Ge-doped GaAs grown by molecular beam epitaxy (1979)
    Springer
    Applied physics 18 (1979), S. 353-356 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 73.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract p/n junctions in Ge-doped GaAs consisting ofp-type layers with extremely smooth surfaces and low compensationn-type layers were fabricated by molecular beam epitaxy (MBE). During growth the site occupancy of Ge was controlled by varying the substrate temperature fromT s 〈500°C (n-type layers) toT s 〉600°C (p-type layers) at aconstant As4 to Ga flux ratio of 2. This yields stable growth conditions for the generation of Ga and As vacancies, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00899688
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Combined RHEED-AES study of the thermal treatment of (001) GaAs surface prior to MBE growth (1979)
    Springer
    Applied physics 19 (1979), S. 63-70 
    Details
    ISSN: 1432-0630
    Keywords: 65 ; 82.65 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Auger analysis and reflection high energy electron diffraction (RHEED) have been used to study the UHV thermal cleaning procedure of different chemically treated (001) GaAs surfaces when heated in ultra high vacuum. It is shown that the ultimate surface composition of the substrate critically depends on the nature and the thickness of the oxide layer formed during chemical treatment. The oxygen removal mechanism has been studied and a comparative analysis of AES and RHEED observations has been drawn. A low residual carbon coverage cleaning procedure is fully investigated and it results that a carbon coverage as low as ∼6×10−2 monolayer induces surface faceting by heating the GaAs substrate at temperatures higher than 570°C. A (001) GaAs surface heated in an arsenic flux up to 570°C is As-stabilized and (411) facets appear at a temperature ranged between 575 and 585°C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00900540
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Optical constants of thin CoSi2 films on silicon (1990)
    Springer
    Applied physics 50 (1990), S. 177-181 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 73.40 ; 78.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The optical transmission of CoSi2 films of thickness 2.6–15 nm is measured in the wavelength range 1–20 μm. The optical constants are evaluated by taking into account multiple reflections in the film and by fitting a Drude model. The plasma frequency ωp=5.4−7.6 eV is equivalent to a carrier density n eff=3×1022 cm−3 and one carrier per unit cell. The relaxation frequency of the plasma resonance assumes high values Γ=2 eV near the interface to silicon and decreases into the bulk film over several nanometers. Films grown off-axis from the (111) Si orientation exhibit an enhanced relaxation frequency.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00343415
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Synthesis of chromium silicide with laser pulses (1990)
    Springer
    Applied physics 50 (1990), S. 411-415 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 79.20D ; 82.50
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Thin chromium films, 60 nm thick, were deposited onto single-crystal silicon wafers. The samples were irradiated with 30 ns single pulses from a Nd: glass laser at fluences ranging from 0.4 to 2.25 J/cm2. Rutherford backscattering spectrometry, transmission electron microscopy and electron diffraction measurements evidence the formation of CrSi2 layers at the Cr/Si interface. The silicide thickness depends on the laser fluence.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00323599
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Influence of implant dose and target temperature on crystal quality and junction depth of boron-doped silicon layers (1991)
    Springer
    Applied physics 53 (1991), S. 222-226 
    Details
    ISSN: 1432-0630
    Keywords: 61.80 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract 30 keV boron ions are implanted at doses of 2×1014 and 2×1015 cm−2 in 〈100〉 silicon wafers kept at room or liquid-nitrogen temperatures. The samples are analyzed by double-crystal X-ray diffraction, transmission electron microscopy and secondary ion-mass spectrometry before and after furnace annealing at 800°C. The low-dose implant does not amorphize the substrate at any of the temperatures, and residual defects together with a remarkably enhanced boron diffusion are observed after annealing. The high-dose implant amorphizes the substrate only at low temperature. In this case, unlike the room-temperature implant, the absence of any residual defect, the incorporation of the dopant in substitutional position and a negligible profile braodening of boron are obtained after annealing. In principle, this process proves itself a promising step for the fabrication of p +/n shallow junctions with good electrical characteristics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00324256
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Kinetics of CW laser-induced crystallization and oxidation of thin, Sb, Se, and Sb2Se3 films in air (1991)
    Springer
    Applied physics 52 (1991), S. 192-196 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 81.40 ; 61.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Thin films of Sb, Se and Sb2Se3 are deposited onto glass and irradiated by a cw-Ar+ laser beam. The kinetics of crystallization and oxidation are traced via the time dependence of optical reflectivity and temperature, T, of the irradiated zone. For Sb2Se3, transformations start abruptly when T attains a critical value, T c, independently of the laser beam power. These T c values are comparable to the ones observed under furnace annealing conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00324417
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Heavy carbon doping of AlAs by elemental-source molecular beam epitaxy (1993)
    Springer
    Applied physics 57 (1993), S. 217-219 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 72.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Heavily carbon-doped AlAs films with free-hole concentrations in excess of 1019 cm−3 have been grown by conventional molecular beam epitaxy using elemental sources. The hole concentration in AlAs:C saturates at 6×1019 cm−3 without any detectable deterioration of the smooth surface morphology and of the structural properties. At very high carbon concentrations the lattice contraction due to the smaller covalent radius of carbon leads to an in-plane lattice constant of the AlAs:C films which is even smaller than that of the GaAs substrate. The high freehole concentration and the tunability of the lattice constant are important for application in p-type GaAs/AlAs Bragg reflectors in surface emitting lasers having a low series resistance and a significantly reduced lattice mismatch.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00332591
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Compositional and structural characterization of strained Si/Si x Ge1−x multilayers and interfaces by high-resolution transmission electron microscopy (1993)
    Springer
    Applied physics 57 (1993), S. 407-414 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 68.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A method is described for the quantitative characterization of strained Si/Si x Ge1−x multilayers and interfaces by high-resolution transmission electron microscopy (HRTEM) in [110] and [100] crystal projections. The method relies on systematic variations of the image contrast with variations of the local composition x for certain ranges of objective lens defocus Δf and specimen thickness t and takes tetragonal lattice distortions fully into account. From an extensive study of the image formation process for Si x Ge1−x alloys and coherent Si/Si x Ge1−x interfaces, ranges of Δf and t were identified by Bloch-wave and multi-slice image simulations at 400 keV for which a quasi-linear functional relationship between the composition x and the first-order Fourier coefficients of the image intensity exists. By application of a novel image-processing algorithm, which allows a precise measurement of image Fourier coefficients in geometrically distorted lattice images, local composition values x can be determined at near-atomic resolution with an accuracy of Δx ≤ ±0.1 and interface sharpness can be detected at the atomic level. Recent applications of the method to the characterization of interfaces of strained Si x Ge1−x layers and short-period Si m Ge n superlattices fabricated by different deposition techniques will be presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00331779
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Interfacial reaction barriers during thin-film solid-state reactions: The crystallographic origin of kinetic barriers at the NiS2/Si(111) interface (1993)
    Springer
    Applied physics 57 (1993), S. 415-425 
    Details
    ISSN: 1432-0630
    Keywords: 68.35 ; 68.55 ; 82.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Epitaxial NiSi2 islands have been grown on Si(111) substrates by the direct reaction of nickel vapour with the silicon substrate in ultra-high vacuum at 400° C. Growth kinetics was shown to depend on the orientation of the islands: A-oriented islands grow about ten times faster than B-oriented ones, with the ratio of the advance rates of the main growth fronts even reaching 30. Applying plan-view transmission electron microscopy and high-resolution electron microscopy of cross sections, a corresponding difference was found in the structure of the NiSi2/Si(111) growth front: Steps at the B-oriented growth front were of three or six interplanar (111) spacings in height, whereas at the A-oriented growth front step-like defects of less than one interplanar (111) spacing in height were observed. These observations are explained by an atomic-scale model of the solid-state reaction, which involves the diffusion of nickel to the interfaces and the nucleation and subsequent lateral propagation of interfacial steps. The difference in the reaction kinetics originates from the presence of kinetic reaction barriers at the NiSi2/Si(111) growth fronts, the barrier at the B-front being higher owing to the lower formation rate of steps of triple atomic height than that of steps of lower height at the A-NiSi2/Si(111) growth front.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00331780
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Ion-beam-induced atomic transport and phase formation in the system nickel/antimony (1993)
    Springer
    Applied physics 57 (1993), S. 469-473 
    Details
    ISSN: 1432-0630
    Keywords: 61.80 ; 68.35 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Nickel-antimony intermetallic compounds of different stoichiometries were studied by means of perturbed angular correlation (PAC) spectroscopy. The hyperfine interaction parameters for 111Cd probes in the crystal lattices of NiSb, Ni5Sb2, Ni3Sb and NiSb2 were determined. The results are discussed in the light of crystallographic data.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00331787
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...