ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • Articles  (137)
  • 68.55  (70)
  • 42.65  (67)
  • Springer  (137)
  • Cambridge University Press
  • Molecular Diversity Preservation International
  • Nature Publishing Group
  • 2015-2019
  • 2010-2014
  • 1990-1994  (84)
  • 1975-1979  (53)
  • 1965-1969
  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (137)
  • Philosophy
  • Education
  • Geosciences
Collection
  • Articles  (137)
Source
Keywords
Publisher
  • Springer  (137)
  • Cambridge University Press
  • Molecular Diversity Preservation International
  • Nature Publishing Group
Years
Year
Topic
  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (137)
  • Philosophy
  • Education
  • Geosciences
  • Physics  (229)
  • 1
    Electronic Resource
    Electronic Resource
    Excitation of multilevel molecular systems by laser ir field (1978)
    Springer
    Applied physics 16 (1978), S. 47-57 
    Details
    ISSN: 1432-0630
    Keywords: 32 ; 42.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Analytical results have been obtained for some aspects of polyatomic molecular interaction with resonant ir laser radiation. The following effects are investigated by use of Schrödinger's equation solution for natural multilevel models: the role of dynamic Stark effect in the transient region from molecular low levels to the quasi-continuum of highly excited vibrational levels; broadening of multiphoton transitions because of relatively fast decay into the quasi-continuum; threshold excitation property of multilevel systems with random detunings. Possible applications to constructing models for numerical calculations dealing with the molecule excitation problem are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00931421
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Tertiary amines as possible tunable laser materials in the ultraviolet (1979)
    Springer
    Applied physics 20 (1979), S. 291-294 
    Details
    ISSN: 1432-0630
    Keywords: 42.65 ; 82.50
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Two photon excitation by a tunable dye laser is used to determine the decay kinetics of some aliphatic tertiary amines. The feasibility of obtaining laser action from trimethylamine and triethylamine by KrF laser pumping is quantitatively discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00894998
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Doppler-free polarization spectroscopy using linear polarized light (1978)
    Springer
    Applied physics 17 (1978), S. 151-154 
    Details
    ISSN: 1432-0630
    Keywords: 33 ; 42.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Lines of theQ-branch of vibrational rotational spectra are distinguished fromP(R)-lines by light induced anisotropy in absorbing gases. We report, for the first time, on experiments using a linearly polarized saturation beam. A CO2-laser was employed to investigate the molecule SF6.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00885247
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Saturation-dips in the weak calcium intercombination line (1978)
    Springer
    Applied physics 17 (1978), S. 199-201 
    Details
    ISSN: 1432-0630
    Keywords: 32 ; 42.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Lamb-dips have been observed in the weak calcium intercombination line by monitoring resonance fluorescence in an atomic beam excited by light of a stabilized cw dye laser inside or outside the laser cavity. A highly sensitive detection scheme is described.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00885256
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Improvedp/n junctions in Ge-doped GaAs grown by molecular beam epitaxy (1979)
    Springer
    Applied physics 18 (1979), S. 353-356 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 73.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract p/n junctions in Ge-doped GaAs consisting ofp-type layers with extremely smooth surfaces and low compensationn-type layers were fabricated by molecular beam epitaxy (MBE). During growth the site occupancy of Ge was controlled by varying the substrate temperature fromT s 〈500°C (n-type layers) toT s 〉600°C (p-type layers) at aconstant As4 to Ga flux ratio of 2. This yields stable growth conditions for the generation of Ga and As vacancies, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00899688
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Combined RHEED-AES study of the thermal treatment of (001) GaAs surface prior to MBE growth (1979)
    Springer
    Applied physics 19 (1979), S. 63-70 
    Details
    ISSN: 1432-0630
    Keywords: 65 ; 82.65 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Auger analysis and reflection high energy electron diffraction (RHEED) have been used to study the UHV thermal cleaning procedure of different chemically treated (001) GaAs surfaces when heated in ultra high vacuum. It is shown that the ultimate surface composition of the substrate critically depends on the nature and the thickness of the oxide layer formed during chemical treatment. The oxygen removal mechanism has been studied and a comparative analysis of AES and RHEED observations has been drawn. A low residual carbon coverage cleaning procedure is fully investigated and it results that a carbon coverage as low as ∼6×10−2 monolayer induces surface faceting by heating the GaAs substrate at temperatures higher than 570°C. A (001) GaAs surface heated in an arsenic flux up to 570°C is As-stabilized and (411) facets appear at a temperature ranged between 575 and 585°C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00900540
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Optical constants of thin CoSi2 films on silicon (1990)
    Springer
    Applied physics 50 (1990), S. 177-181 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 73.40 ; 78.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The optical transmission of CoSi2 films of thickness 2.6–15 nm is measured in the wavelength range 1–20 μm. The optical constants are evaluated by taking into account multiple reflections in the film and by fitting a Drude model. The plasma frequency ωp=5.4−7.6 eV is equivalent to a carrier density n eff=3×1022 cm−3 and one carrier per unit cell. The relaxation frequency of the plasma resonance assumes high values Γ=2 eV near the interface to silicon and decreases into the bulk film over several nanometers. Films grown off-axis from the (111) Si orientation exhibit an enhanced relaxation frequency.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00343415
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Synthesis of chromium silicide with laser pulses (1990)
    Springer
    Applied physics 50 (1990), S. 411-415 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 79.20D ; 82.50
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Thin chromium films, 60 nm thick, were deposited onto single-crystal silicon wafers. The samples were irradiated with 30 ns single pulses from a Nd: glass laser at fluences ranging from 0.4 to 2.25 J/cm2. Rutherford backscattering spectrometry, transmission electron microscopy and electron diffraction measurements evidence the formation of CrSi2 layers at the Cr/Si interface. The silicide thickness depends on the laser fluence.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00323599
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Influence of implant dose and target temperature on crystal quality and junction depth of boron-doped silicon layers (1991)
    Springer
    Applied physics 53 (1991), S. 222-226 
    Details
    ISSN: 1432-0630
    Keywords: 61.80 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract 30 keV boron ions are implanted at doses of 2×1014 and 2×1015 cm−2 in 〈100〉 silicon wafers kept at room or liquid-nitrogen temperatures. The samples are analyzed by double-crystal X-ray diffraction, transmission electron microscopy and secondary ion-mass spectrometry before and after furnace annealing at 800°C. The low-dose implant does not amorphize the substrate at any of the temperatures, and residual defects together with a remarkably enhanced boron diffusion are observed after annealing. The high-dose implant amorphizes the substrate only at low temperature. In this case, unlike the room-temperature implant, the absence of any residual defect, the incorporation of the dopant in substitutional position and a negligible profile braodening of boron are obtained after annealing. In principle, this process proves itself a promising step for the fabrication of p +/n shallow junctions with good electrical characteristics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00324256
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Subharmonic generation in photorefractive crystals: Application of theory to experiment (1992)
    Springer
    Applied physics 55 (1992), S. 55-60 
    Details
    ISSN: 1432-0630
    Keywords: 42.40 ; 42.65 ; 42.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The main results of the theory of spatial subharmonics in photorefractive crystals are summarized. The theory shows that Kukhtarev's equations for the photorefractive response are not valid for sufficiently large values of the mobility-lifetime product and for certain parameters (external field, frequency detuning, grating vector, pump intensity) of a two-beam experiment. The solution for the space-charge field including only the fundamental and the higher harmonics is not stable against the generation of new spatial frequencies. The condition of subharmonic generation and the main characteristics of the subharmonics are expressed by standard experimental and crystal parameters. Good quantitative agreement between theory and experiment is obtained. The prospects of further investigations of subharmonics are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00324602
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...