ISSN:
0538-8066
Keywords:
Chemistry
;
Physical Chemistry
Source:
Wiley InterScience Backfile Collection 1832-2000
Topics:
Chemistry and Pharmacology
Notes:
The static system decomposition kinetics of disilane (\documentclass{article}\pagestyle{empty}\begin{document}${\rm Si}_{\rm 2} {\rm H}_{\rm 6} \mathop {\longrightarrow}\limits^1 {\rm SiH}_{\rm 2} + {\rm SiH}_{\rm 4}$\end{document}, 538-587 K and 10-500 Torr), are reported. Reaction rate constants are weakly pressure dependent, and best fits of the data are realized with RRKM fall-off calculations using logA1,∞ = 15.75 and E1,∞ = 52,200 cal. These parameters yield AHf0(SiH2)298 = (63.5 - Eb, c) kcal mol,-1 where Eb, c is the activation energy for the back reaction at 550 K, M = 1 std state. Five other silylene heat-of-formation values (ranging from 63.9 - Eb, c to 66.0 - Eb, c kcal mol-1) are deduced from the reported decomposition kinetics of trisilane and methyldisilane, and from the reported absolute and relative rate constants for silylene insertions into H2 and SiH4. Assuming Eb, c = 0, an average value of ΔHf0(SiH2) = 64.3 ± 0.3 kcal mol-1 is obtained. Also, a recalculation of the activation energy for silylene insertion into H2, based in part on the new disilane decomposition Arrhenius parameters, gives (0.6 + Eb, c) kcal mol-1, in good agreement with theoretical calculations.
Additional Material:
4 Tab.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1002/kin.550190805
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