Publication Date:
2013-09-08
Description:
Article Despite its importance for non-volatile memory, the origin of resistive switching in a metal insulator-metal structure is unclear. Park et al. fabricate such a structure inside a transmission electron microscope to show that switching occurs via oxygen-vacancy migration, which changes the conduction channels. Nature Communications doi: 10.1038/ncomms3382 Authors: Gyeong-Su Park, Young Bae Kim, Seong Yong Park, Xiang Shu Li, Sung Heo, Myoung-Jae Lee, Man Chang, Ji Hwan Kwon, M. Kim, U-In Chung, Regina Dittmann, Rainer Waser, Kinam Kim
Electronic ISSN:
2041-1723
Topics:
Biology
,
Chemistry and Pharmacology
,
Natural Sciences in General
,
Physics
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