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  • Artikel  (60)
  • Artikel: DFG Deutsche Nationallizenzen  (60)
  • porous silicon  (59)
  • RAPD
  • biological control
  • 2000-2004  (60)
  • Maschinenbau  (60)
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  • Artikel  (60)
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  • Artikel: DFG Deutsche Nationallizenzen  (60)
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  • 2000-2004  (60)
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  • 1
    Digitale Medien
    Digitale Medien
    Screening of heterozygous DNA markers in shiitake (Lentinula edodes) using de-dikaryotization via preparation of protoplasts and isolation of four meiotic monokaryons from one basidium (2000)
    Springer
    Journal of wood science 46 (2000), S. 395-400 
    Details
    ISSN: 1611-4663
    Schlagwort(e): Lentinula edodes ; Heterozygous DNA marker ; RAPD ; de-dikaryotization ; Protoplast
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Land- und Forstwirtschaft, Gartenbau, Fischereiwirtschaft, Hauswirtschaft , Maschinenbau
    Notizen: Abstract A suitable screening method for heterozygous DNA markers in shiitake,Lentinula edodes (Berk.) Pegler, is reported. Monokaryons were derived from a dikaryon by de-dikaryotization via protoplast formation. Compatibility of the monokaryons was determined by pairwise culture on agar plates. We selected the primers to amplify polymorphic fragments among the original strain (Hokken600∶H600) and two monokaryons (H600PP-39 and H600PP-67) showing compatibility. A total of 135 fragments were selected as specific random amplified polymorphic DNAs (RAPDs) resulting from 56 primers of the 147 primers tested. Furthermore, we tested whether the polymorphic fragments segregated into 2∶2 among four strains isolated from a basidium. Most of the polymorphic fragments (about 97.8%) showed 2∶2 segregation among the four strains. We concluded that the polymorphic fragments were heterozygous if they were detected in either of the monokaryons (H600PP-39 and H600PP-67) and segregated to 2∶2 among four meiotic strains (H600B-1,-2, -3, and -4). A total of 132 heterozygous DNA markers were therefore selected from a dikaryon of shiitake (Hokken600∶H600).
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00776403
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  • 2
    Digitale Medien
    Digitale Medien
    Electrical Characterisation of Photovoltaic Porous Si (2000)
    Springer
    Journal of porous materials 7 (2000), S. 295-298 
    Details
    ISSN: 1573-4854
    Schlagwort(e): porous silicon ; photo-voltage ; d.c. conductivity
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Chemie und Pharmazie , Maschinenbau
    Notizen: Abstract In this study n-type and p-type PV devices have been fabricated by anodising Si wafers with various resistivities in aqueous ethanoic HF solution followed by deposition of semitransparent contacts. semitransparent deposition onto the porous layers. Various methods have been used for the optimisation of problematic contact to nanoporous layers. The measurements of importance are current-voltage (I-V) characteristics, the photovoltaic (PV) decay time spectrum, and the PV response as a function of excitation energy.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1023/A:1009600619044
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  • 3
    Digitale Medien
    Digitale Medien
    Laser Induced Degradation of Photoluminescence Intensity of Porous Silicon (2000)
    Springer
    Journal of porous materials 7 (2000), S. 307-310 
    Details
    ISSN: 1573-4854
    Schlagwort(e): porous silicon ; photoluminescence ; degradation
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Chemie und Pharmazie , Maschinenbau
    Notizen: Abstract The evolution, under vacuum, of the photoluminescence (PL) intensity of porous silicon (PS) has been studied as function of anodisation conditions, laser line and post-anodisation treatments. It was shown that the degradation of the PL intensity depends on the internal structure of PS. In particular, the degradation is important for PS layers formed essentially by crystallites having small size or where amorphous phase exists. The experimental results have been interpreted using a theoretical model, which takes into account the variation with time of the local concentration of the luminescent centers.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1023/A:1009613004932
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  • 4
    Digitale Medien
    Digitale Medien
    Stress Measurement Technique to Monitor Porous Silicon Processing (2000)
    Springer
    Journal of porous materials 7 (2000), S. 319-321 
    Details
    ISSN: 1573-4854
    Schlagwort(e): porous silicon ; stress measurements ; thermal annealing
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Chemie und Pharmazie , Maschinenbau
    Notizen: Abstract Macroscopic stress measurements are used to monitor Porous Silicon processing. Silicon wafer of 1Ω cm resistivity, n-type and 〈1 0 0〉 orientation were used as starting material. Porous Silicon layers with a porosity of 57% and a thickness of 85 μm, fabricated by electrochemical anodisation, were differently dried, then the evolution of the wafer deflection has been followed with storage time in air. Thermal treatments both in inert and oxidant atmosphere have been performed up to 1000°C. The stress behaviour vs. temperature allows to estimate the hydrogen desorption activation energy.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1023/A:1009621206749
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  • 5
    Digitale Medien
    Digitale Medien
    Superlattices as Characterisation Tool for the Beginning of PS Formation (2000)
    Springer
    Journal of porous materials 7 (2000), S. 373-376 
    Details
    ISSN: 1573-4854
    Schlagwort(e): porous silicon ; superlattices ; oxidation
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Chemie und Pharmazie , Maschinenbau
    Notizen: Abstract Initial stage of porous silicon (PS) formation has been studied in an original way. Multilayer structures constituting of very thin layers of low porosity and thick layers of high porosity have been fabricated and characterised by optical tools and electron microscopy. The non linear behaviour resulting in a change in the dissolution velocity has been quantified by using a stack layer structure. Finally using thermal oxidation it has been shown that, due to the selective oxidation as a function of the porosity, porous silicon can be used to produce a Si/SiO2 like structure.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1023/A:1009618517652
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  • 6
    Digitale Medien
    Digitale Medien
    Laplacian Growth Models for Porous Silicon Formation—Stability Analysis (2000)
    Springer
    Journal of porous materials 7 (2000), S. 345-348 
    Details
    ISSN: 1573-4854
    Schlagwort(e): porous silicon ; interface growth ; Laplacian growth ; linear stability analysis
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Chemie und Pharmazie , Maschinenbau
    Notizen: Abstract We develop a Laplacian model of interface growth which includes basic features of the anodisation of silicon in hydrofluoric acid. Our aim is to find mechanisms for the characteristic properties of porous silicon formation, such as the transition from electropolishing to pore formation and the typical pore distance. The local etching rate of the interface between the semiconductor and the electrolyte is determined by the local current density. We model the diffusive transport of charge carriers in the semiconductor and of reactants in the electrolyte including the basic features of the electrochemical reaction at the interface. A linear stability analysis of a flat and planar interface is performed in order to study the initial state of pore formation.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1023/A:1009630920378
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  • 7
    Digitale Medien
    Digitale Medien
    Orientation Effect of the Wafer on the Structural Properties of P+ Type Porous Silicon Layers (2000)
    Springer
    Journal of porous materials 7 (2000), S. 357-361 
    Details
    ISSN: 1573-4854
    Schlagwort(e): porous silicon ; X-ray diffraction ; differential scanning calorimetry
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Chemie und Pharmazie , Maschinenbau
    Notizen: Abstract The structural properties of (111) oriented p+ type Porous Silicon (PS) samples are investigated using various X-ray diffraction techniques and compared to (001) p+ type PS layer structure. High resolution X-ray diffractometry was used to record rocking curves and reciprocal space maps, giving indications about the crystalline quality of the PS samples as well as about the pore orientation. X-ray diffraction and reflectivity performed on thin PS layers allow to estimate the layer thickness, porosity and roughness of the PS/substrate interface.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1023/A:1009691122195
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  • 8
    Digitale Medien
    Digitale Medien
    AC Conductivity of Porous Silicon from Monte Carlo Simulations (2000)
    Springer
    Journal of porous materials 7 (2000), S. 107-110 
    Details
    ISSN: 1573-4854
    Schlagwort(e): porous silicon ; conductivity ; percolation
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Chemie und Pharmazie , Maschinenbau
    Notizen: Abstract The AC conductivity of a percolation model with local energetical disorder for porous Silicon in three dimensions, σ(ω), is studied by Monte Carlo simulations. The model includes both diffusion and recombination processes and σ(ω) is obtained by a Fourier transform of the mean-square displacement of the carriers, where hopping diffusion of a single type of carrier (either an electron or an exciton) and two types of carriers (an electron and a hole) are considered. It is found that at low temperatures, the behavior of σ(ω) depends sensitively on the type of carrier considered.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1023/A:1009678502689
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  • 9
    Digitale Medien
    Digitale Medien
    Porous Semiconductor Micropatterns Formed on Focussed Ion Beam Implants (2000)
    Springer
    Journal of porous materials 7 (2000), S. 233-237 
    Details
    ISSN: 1573-4854
    Schlagwort(e): porous silicon ; integrated optics ; wave guides
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Chemie und Pharmazie , Maschinenbau
    Notizen: Abstract In this work we report a principle that allows one to write visible light emitting silicon patterns of arbitrary shape down to the sub-micrometer scale. We demonstrate that porous Si growth can electrochemically be initiated preferentially at surface defects created in an n-type Si substrate by Si++ ion bombardment. Using a focused ion beam (FIB) as a source of ions, arbitrary defect patterns can be written into a substrate. The growth of light emitting porous silicon is then selectively achieved by an electrochemical treatment which triggers Si dissolution only at these defect sites. The selectivity of the electrochemical dissolution reaction can be attributed to a facilitated Schottky barrier breakdown at the implanted surface defects which leads to the desired pore formation in confined surface areas.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1023/A:1009655324979
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  • 10
    Digitale Medien
    Digitale Medien
    Electroluminescence from Porous Silicon Studied Experimentally (2000)
    Springer
    Journal of porous materials 7 (2000), S. 267-270 
    Details
    ISSN: 1573-4854
    Schlagwort(e): porous silicon ; photoluminescence ; electroluminescence ; band structure ; experimental
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Chemie und Pharmazie , Maschinenbau
    Notizen: Abstract Electroluminescence, photoluminescence, and current-voltage measurements have been carried out on a series of samples consisting of porous silicon on top of crystalline silicon. The electroluminescence spectral distributions are markedly shifted towards long wavelengths in comparison to those seen with photoluminescence. The results are discussed and explained in terms of the energy-band structure of porous silicon. The problem of injecting electrons as well as holes into the porous silicon layer is pointed out and discussed.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1023/A:1009675829522
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