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  • Articles  (21)
  • Articles: DFG German National Licenses  (21)
  • 82.65  (21)
  • 2020-2024
  • 1985-1989  (21)
  • 1988  (21)
  • Physics  (21)
  • 1
    Electronic Resource
    Electronic Resource
    Isotopically selective CVD of silicon by IRMPD of Si2F6 (1988)
    Springer
    Applied physics 47 (1988), S. 243-245 
    Details
    ISSN: 1432-0649
    Keywords: 82.50 ; 82.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The IRMPD of Si2F6 by a CO2 TEA laser was applied to isotopically selective CVD of silicon. A white film, probably consisting of polymers of SiF2, was deposited on a metal foil during the irradiation of natural Si2F6 with the laser radiation at 951.19 cm−1 and about 1.5 J cm−2. Upon heating, the film became dark brown, evolving SiF4. The30Si content was found to be as high as about 20%.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00697344
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  • 2
    Electronic Resource
    Electronic Resource
    Chemical processing with lasers: Recent developments (1988)
    Springer
    Applied physics 46 (1988), S. 261-270 
    Details
    ISSN: 1432-0649
    Keywords: 42.60 ; 68.20 ; 82.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Chemical processing of materials with lasers is a new and interdisciplinary field with many already realized and potential applications in different areas of technology. This overview summarizes some recent developments in this rapidly expanding field.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00692884
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  • 3
    Electronic Resource
    Electronic Resource
    Influence of laser fluence and dopant gas pressure on properties of photochemical doping of Si into GaAs using XeCl excimer Laser (1988)
    Springer
    Applied physics 45 (1988), S. 189-192 
    Details
    ISSN: 1432-0630
    Keywords: 66.30 ; 82.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Silicon doping into GaAs has been performed with the combination of pulsed XeCl excimer laser (wavelength: 308 nm) and silane gas (SiH4). Sheet resistances and depth profiles of the Si-doped GaAs as the functions of laser fluence, the number of laser pulses and gas pressure have been measured in order to make clear the relation between properties of doped GaAs and irradiation conditions. The secondary ion mass spectroscopy (SIMS) has revealed that the depth of Si in GaAs is limited in such a very shallow region (30–110 nm) that might be controlled easily by irradiation conditions. The efficiency for carrier generation of Si in GaAs with laser fluence is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00615003
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  • 4
    Electronic Resource
    Electronic Resource
    Negative thermal feedback in laser-assisted oxidation of thin Zn films (1988)
    Springer
    Applied physics 47 (1988), S. 313-316 
    Details
    ISSN: 1432-0630
    Keywords: 81.60 ; 82.65 ; 42.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The processes leading to the control of the lateral dimension of laser-assisted oxidation of Zn films on glass are examined. It is shown that it is determined by negative feedback between temperature and optical absorption.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00615938
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  • 5
    Electronic Resource
    Electronic Resource
    Laser spectroscopy of desorbing molecules (1988)
    Springer
    Applied physics 47 (1988), S. 37-54 
    Details
    ISSN: 1432-0630
    Keywords: 33.20 ; 82.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract In this article the application of tunable dye lasers to desorption phenomena is illuminated. These lasers provide radiation continuously tunable from 105 nm in the vacuum ultraviolet to about 10 μm in the mid-IR. By employing either laser induced fluorescence (LIF) or resonance enhanced multiphoton ionization (REMPI) spectroscopy almost all diatomic and many polyatomic molecules can be probed with the sensitivity required to detect desorbing molecules under UHV conditions. The spectral resolution of the lasers is sufficiently high that rotational state selectivity is achieved. Recent developments permit in addition the velocity distributions of molecules to be determined with internal quantum state resolution. Therefore very detailed information about the molecular dynamics has been obtained. In most experiments so far reactive recombinations off surfaces have been investigated. In this paper special emphasis will be given to the recombination of hydrogen on copper and palladium surfaces. For these systems very detailed data about the internal state populations at various surface temperatures have been obtained. The rotational cooling previously observed in molecular beam scattering has also been established for desorption. Strong vibrational excitation has been observed, which in the case of desorption from copper may be associated with the recombination dynamics, whereas for desorption of D2 from Pd(100) a molecular precursor state might be responsible. By measuring the velocity distribution in each quantum state, the complete energetics of the desorbing molecules has been determined. Some first experiments on laser induced desorption with state selective detection of the desorbing molecules will also be discussed. Finally, making use of the polarization analysis of the signal, alignment effects in the desorption can be observed, permitting observation of molecular dynamics with a “magnifying glass”.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00619697
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  • 6
    Electronic Resource
    Electronic Resource
    Laser-induced chemical etching of silicon in chlorine atmosphere (1988)
    Springer
    Applied physics 47 (1988), S. 377-386 
    Details
    ISSN: 1432-0630
    Keywords: 81.60 ; 82.65 ; 42.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Laser-induced chemical etching of (100) Si in Cl2 atmosphere has been investigated using a combined laser-beam irradiation scheme. 308 nm XeCl excimer laser radiation at parallel incidence has been used to exclusively generate Cl atoms in the gas phase above the Si surface. Additionally, 647.1 nm Kr+ laser radiation at perpendicular incidence has been used to exclusively generate photocarriers within the Si surface. The Cl atom concentration was determined — independently — from both the observed chemiluminescence following the Cl-Cl atom recombination, and from numerical calculations. The etch rateW observed on the Si surface was found to be directly proportional to the Cl atom concentration in the gas phase, and it increases sublinearly with the Kr+ laser powerP according toW∞P 0.7.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00615502
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  • 7
    Electronic Resource
    Electronic Resource
    Wet-chemical etching of Mn-Zn ferrite by focused Ar+-laser irradiation in H3PO4 (1988)
    Springer
    Applied physics 47 (1988), S. 319-325 
    Details
    ISSN: 1432-0630
    Keywords: 81.40 ; 82.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Maskless etching of Mn-Zn ferrite in H3PO4 aqueous solution by Ar+-ion laser irradiation has been investigated to obtain high etching rates and aspect-ratios of etched grooves. The etching processes have been found to be photochemical in the low laser power region and thermochemical in the high laser power region. High etching rates of up to 340 μm/s and an aspect-ratio of 30 for slab structures have been achieved. In the case of high aspect-ratio structure, the etching rate was limited by the low diffusion efficiency of etched products in the etchant. Periodic ripple structures have been observed under specific etching conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00615495
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  • 8
    Electronic Resource
    Electronic Resource
    Ultraviolet laser ablation and etching of polymethyl methacrylate sensitized with an organic dopant (1988)
    Springer
    Applied physics 45 (1988), S. 289-292 
    Details
    ISSN: 1432-0630
    Keywords: 42.60 ; 82.65 ; 73.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Although polymethyl methacrylate (PMMA) is essentially transparent to light of 308 or 351 nm, it can be made sensitive to photoablation and etching by excimer laser pulses (20 ns half-width) of those wavelengths by the introduction of an organic dopant. The dopant (trade name=Tinuvin*) is actually a quencher of the first electronic excited state of PMMA and is therefore used commercially to stabilize the polymer against photodegradation. Laser etching of Tinuvin-doped PMMA can be shown to be a photochemical process in which the Tinuvin decomposes by the absorption of two or more photons and causes the ablation of the surrounding polymer.*[2-(2′-hydroxy-3′,5′-diisopentyl-phenyl) benzotriazole].
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617933
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  • 9
    Electronic Resource
    Electronic Resource
    Laser-induced thermochemical maskless-etching of III–V compound semiconductors in chloride gas atmosphere (1988)
    Springer
    Applied physics 45 (1988), S. 305-312 
    Details
    ISSN: 1432-0630
    Keywords: 81.40 ; 82.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Thermochemical maskless etching of compound semiconductors (GaAs, InP, InSb, and GaP) has been performed by focused Ar-laser irradiation in chloride gas atmospheres. A controlled minimum linewidth of down to 0.6 μm with a maximum etching rate of up to 13 μm/s has been obtained. Minimum laser powers necessary for thermochemical etching in each of compound semiconductors were found to be 0.24, 0.56, and 0.06 W, corresponding to minimum local temperature rises of 190, 515, and 110°C for GaAs, InP, and InSb, respectively. Etching rates exhibited Arrhenius behavior with activation energies of 3.6–3.9 kcal/mole. Etching at excessively higher laser powers than those minimum powers was found, by microprobe photoluminescence measurements, to degrade the optical quality of the etched substrate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617936
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  • 10
    Electronic Resource
    Electronic Resource
    Laser-induced chemical etching of silicon in chlorine atmosphere (1988)
    Springer
    Applied physics 45 (1988), S. 293-299 
    Details
    ISSN: 1432-0630
    Keywords: 81.60 ; 82.65 ; 42.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Laser-induced chemical etching of single-crystalline (100) Si in Cl2 atmosphere has been investigated for continuous Ar+ and Kr+ laser irradiation at around 351 nm, and at 457.9, 488.0, 514.5, and 647.1 nm. For laser irradiances below 105 W/cm2 the etching mechanism is non-thermal, and is based on photo-generated electron-hole pairs within the Si surface and Cl atoms produced within the gas phase. The experimental results are compared with model calculations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617934
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