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  • Articles  (153)
  • 61.70  (153)
  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (153)
  • Energy, Environment Protection, Nuclear Power Engineering
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  • Articles  (153)
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  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (153)
  • Energy, Environment Protection, Nuclear Power Engineering
  • Physics  (162)
  • 1
    Electronic Resource
    Electronic Resource
    Phase transformations and vacancy formation energies of transition metals by positron annihilation (1979)
    Springer
    Applied physics 20 (1979), S. 135-140 
    Details
    ISSN: 1432-0630
    Keywords: 78.70 ; 71.60 ; 61.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The technique of the coincidence count rate at the peak of the angular correlation curve (CCR) in positron annihilation has been applied to the investigation of vacancy formation energies in thermal equilibrium in nickel, cobalt, and iron. The monovacancy formation energyE 1v/F has been determined to (1.55±0.05) eV and (1.34±0.07) eV for nickel and cobalt, and (1.60±0.10) eV for α-iron, and (1.40±0.15) eV for γ-iron, respectively. The structural phase transformations in cobalt (693 K) and iron (1183 K, 1663 K) are exhibited by discontinuities of the CCR. In the case of cobalt the CCR follows exactly the change of the thermal expansion at the transition temperature. The temperature dependence of the CCR in the prevacancy region is found to be proportional to the thermal expansion for all metals investigated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00885934
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  • 2
    Electronic Resource
    Electronic Resource
    Propagation of ultrasonic shear waves in γ-ray irradiated quartz crystals (1977)
    Springer
    Applied physics 13 (1977), S. 171-173 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 ; 61.80 ; 62
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Ultrasonic pulsed-echo patterns in AC-cut quartz crystals cooled to 4.2 K have been studied over the frequency range 0.2〈f〈0.6 [GHz]. The observed beats, superimposed on the exponential decay, have been identified as resulting from diffraction of the waves in the finite-size crystals. Furthermore, it has been found that irradiation with 1 MeV γ-rays yields samples with both a smaller attenuation constant and less pronounced beats. The significance of the reported results lies mainly in the potential application of the procedure of γ-ray irradiation, and subsequent bleaching with ultraviolet light, in order to obtain quartz crystals with improved acoustic patterns.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00882477
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  • 3
    Electronic Resource
    Electronic Resource
    The influence of intrisic defects on the degradation and luminescence of GaAs and other III–V compounds (1980)
    Springer
    Applied physics 23 (1980), S. 303-309 
    Details
    ISSN: 1432-0630
    Keywords: 42.80 ; 61.70 ; 61.80 ; 78.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A significant contribution to the degradation of GaAs-based lasers and light-emitting diodes arises from the formation of so-called dark line defects. It is shown that these defects are accumulations of non-radiative recombination centres around dislocations. The centres are identified as As vacancies, which are emitted by climbing dislocations, concomitantly with the absorption of Ga interstitials. From scanning deep-level transient spectroscopy observations it is concluded that the so-called DX centres are Ga interstitials. The driving force for dislocation climb and thus for dark-line-defect formation is a supersaturation of Ga interstitials originating from the growth of the GaAs crystals under Ga-rich conditions as a consequence of the high volatility of As. Phenomena in other III–V compound semiconductors related to the formation of dark line defects in GaAs are also discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00914916
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  • 4
    Electronic Resource
    Electronic Resource
    Vacancy noise measurements in metals: Calculation of the power spectrum (1983)
    Springer
    Applied physics 30 (1983), S. 117-122 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 ; 72.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Fluctuations in the number of vacancies in metals in thermal equilibrium lead to resistivity fluctuations. Analysis of these fluctuations permits measurement of both formation and migration enthalpy of the vacancies. The power spectrum of the fluctuations is calculated using a series of statistically independent pulses. It can be derived from the diffusion equation for any geometry of the vacancy sinks. Vacancy diffusion to the surface of a thin plate or of a sphere are treated as examples. The measurability of vacancy noise is assessed. It should also be possible to measure vacancy noise during irradiation. It is predicted that correlated vacancy creation, which may occur during irradiation, will cause an increase in the power spectrum.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00614913
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  • 5
    Electronic Resource
    Electronic Resource
    Vacancy migration energy in quenched Al-Mg0.01 alloy by positron annihilation (1981)
    Springer
    Applied physics 26 (1981), S. 107-113 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 ; 78.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The isothermal recovery rates of vacancy-impurity complexes in an aluminium-1% magnesium alloy are measured in situ at eight temperatures from variations of colinear annihilation γ-rays versus time. These data analysed in terms of a time dependant β+-trapping model yield two apparent migration energies of 0.8 eV±0.1 eV and 0.9 eV±0.05 eV. The nature of the complexes is discussed and their binding energy is estimated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616657
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  • 6
    Electronic Resource
    Electronic Resource
    Proton conductivity in the layer compound H3OUO2AsO4·3H2O (HU As) (1983)
    Springer
    Applied physics 32 (1983), S. 45-53 
    Details
    ISSN: 1432-0630
    Keywords: 66.33 ; 61.70 ; 82.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The proton conductivity in H3OUO2AsO4·3H2O (HUAs) has been measured below the transition temperature at 299 K. A consistent picture of the elementary process taking place is developed from separate electrochemical, spectroscopic and calorimetric measurements. The conductivity is proposed to occur by the “vehicle mechanism” of proton transport, i.e. the cooperative motion of H3O+ and H2O. This mechanism is compared with the Grotthuss and the simple ion hopping mechanism.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617828
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  • 7
    Electronic Resource
    Electronic Resource
    Diffusion of gold in silicon studied by means of neutron-activation analysis and spreading-resistance measurements (1984)
    Springer
    Applied physics 33 (1984), S. 133-140 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 ; 66.30 ; 85.3085.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract In- and out-diffusion of gold in silicon were investigated with the aid of a neutronactivation analysis in combination with mechanical sectioning or by the spreadingresistance technique. In-diffusion profiles in the range 1371–1073 K show that Au diffuses in Si mainly via the so-called kick-out mechanism. From the Au diffusion and solubility measurements the interstitialcy contributionD I SD to the Si self-diffusion coefficient was determined, which shows that the self-diffusion occurs to a considerable extent via selfinterstitials. Out-diffusion profiles at 1173 K were measured on wafers homogeneously supersaturated with Au. The observed decrease of the electrical activity of Au in the bulk indicates that during the out-diffusion anneal the majority of Au atoms originally dissolved substitutionally changes its configuration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617619
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  • 8
    Electronic Resource
    Electronic Resource
    Preparation of Nb3Sn structures on low pinning niobium foils for use in guided flux motion experiments (1982)
    Springer
    Applied physics 27 (1982), S. 167-169 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 ; 68 ; 74
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A simple method is presented to prepare very low pinning niobium foils on which geometrically well defined Nb3Sn-pinning structures of arbitrary shape are deposited. This facilitates the fabrication of samples for guided vortex motion experiments some of which are reported.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616668
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  • 9
    Electronic Resource
    Electronic Resource
    TEM image contrast from antiphase domains in GaAs: Ge(001) grown by MBE (1984)
    Springer
    Applied physics 34 (1984), S. 231-236 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 61.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Antiphase domains occur in thin GaAs epitaxial films grown on Ge(001) by molecular beam epitaxy. The domains have been imaged by transmission electron microscopy using 200-type reflections in dark field. The carefully chosen imaging conditions with convergent illumination ensure that doubly diffracted beams from a pair of first order Laue zone discs contribute to the singly diffracted 200-type beams. The three Bragg reflections may add in or out of phase to give domains in either light or dark contrast depending on their polarity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616577
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  • 10
    Electronic Resource
    Electronic Resource
    Double anion antisite in GaAs - the simplest member of EL2 family? (1985)
    Springer
    Applied physics 38 (1985), S. 253-261 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 ; 71.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Properties of an aggregate composed of two nearest-neighbour AsGa defects are examined. Such an aggregate behaves like a dimer in which the two constituents are weakly coupled giving rise to a double near-degeneracy of electronic states of the system. The system is unstable against the Jahn-Teller (J-T) distortion that couples pairs of nearly degenerate states. Usually the distortion is stabilized by localization of a single electron, or a pair of electrons, at one of the two AsGa defects. If one of the two electrons is excited into theT 2 resonant state of individual AsGa then the vibronic coupling can be strong, and the resulting J-T effect can give rise to a metastable behaviour of the system. It is argued that the (AsGa)2 aggregate is the best candidate for EL2 centre in GaAs crystals.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616060
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