Oxidation of alkali/GaAs(110) interfaces

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Abstract

Codeposition of K, Rb, and Cs with oxygen on GaAs(110) at ≈150 K results in the formation of distinct alkali oxides, and the respective O2−, O2−2, and O−2 species can be identified from their 0–2p derived valence-band photoemission multiplets. This does not apply to Na due to a more covalent bonding. While the substrate is unaffected at 150 K, it is oxidized upon annealing with an enhancement up to ⋍ 109 by the alkali atoms. The mechanism of GaAs oxidation is dependent on the thickness of the alkali layer.

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    on leave from Departamento de Física de la Materia Condensada, Universidad Autónoma de Madrid, Ciudad Universitaria de Canto Blanco, E-28049 Madrid (Spain).

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