RBS analysis of GaAs and InP after electron beam annealing

doi:10.1016/0168-583X(90)90347-W

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Volume 50, Issues 1–4, 3 April 1990, Pages 145-149

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Abstract

The decomposition of GaAs and InP surfaces during scanned electron-beam rapid thermal annealing (RTA) has been investigated. The molecules evaporated from the uncapped surfaces during annealing were collected on Si substrates and analysed using 2.0 and 3.5 MeV ⁴He Rutherford backscattering (RBS). The evaporation behaviour was determined in the temperature ranges 600–830° C (GaAs) and 450–630° C (InP). Deep-level transient spectroscopy, current-voltage and capacitance-voltage measurements were used to characterize the electrical properties of the annealed samples. Comparison of RBS and electrical measurements yields an optimum annealing temperature for the chosen annealing technique.

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Cited by (1)

Sputtering of compound semiconductor surfaces. ii. compositional changes and radiation-induced topography and damage
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Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

RBS analysis of GaAs and InP after electron beam annealing

Abstract

Appl. Phys. Lett.

J. Appl. Phys.

Jpn. J. of Appl. Phys.

Appl. Phys. Lett.

Sputtering of compound semiconductor surfaces. ii. compositional changes and radiation-induced topography and damage