Comparison of the properties of Ge thin films grown by plasma-assisted deposition with conventional vacuum evaporation
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Cited by (3)
Influence of hydrogen on structural and optical properties of low temperature polycrystalline Ge films deposited by RF magnetron sputtering
2010, Journal of Crystal GrowthCitation Excerpt :Consequently, the preferential orientation changes from (2 2 0) to (1 1 1). This trend is in good agreement with others [20,30,31] except that in the case Ts=450 °C our film has (1 1 1) preferential orientation while that of the film with a similar thickness reported in Ref. [20] was dominated by the (2 2 0) orientation up to 600 °C. Based on the strong (1 1 1) preferential orientation observed, the Ge:H film sputtered at 450 °C is thought to be polycrystalline.
Structural dependence of electrical properties of Ge films prepared by RF magnetron sputtering
2011, Applied Physics A: Materials Science and ProcessingGe films fabricated by plasma-assisted deposition in hydrogen plasma
1990, Proceedings of SPIE - The International Society for Optical Engineering
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