Elsevier

Applied Surface Science

Volumes 33–34, September 1988, Pages 632-639
Applied Surface Science

Comparison of the properties of Ge thin films grown by plasma-assisted deposition with conventional vacuum evaporation

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Abstract

Polycrystalline Ge films have been fabricated on glass substrates at various temperatures by conventional vacuum evaporation and plasma-assisted deposition. Electrical properties, grain size and X-ray diffraction spectra of the films were measured and compared. The Hall mobilities and grain size increased linearly with the substrate temperature up to 500°C, and there was no significant difference between the films fabricated by the two methods. The X-ray diffraction intensity ratio of (220)/(111), on the other hand, depends on the fabrication method. The films fabricated by the plasma-assisted deposition had a lower ratio than the others at low substrate temperatures.

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Cited by (3)

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    2010, Journal of Crystal Growth
    Citation Excerpt :

    Consequently, the preferential orientation changes from (2 2 0) to (1 1 1). This trend is in good agreement with others [20,30,31] except that in the case Ts=450 °C our film has (1 1 1) preferential orientation while that of the film with a similar thickness reported in Ref. [20] was dominated by the (2 2 0) orientation up to 600 °C. Based on the strong (1 1 1) preferential orientation observed, the Ge:H film sputtered at 450 °C is thought to be polycrystalline.

  • Ge films fabricated by plasma-assisted deposition in hydrogen plasma

    1990, Proceedings of SPIE - The International Society for Optical Engineering
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