Elsevier

Surface Science

Volume 162, Issues 1–3, 3 October 1985, Pages 657-662
Surface Science

Epitaxial growth of platinum silicide layers on (111) Si substrates

https://doi.org/10.1016/0039-6028(85)90963-XGet rights and content

Abstract

Epitaxial growth of PtSi on (111)Si substrate was investigated for various substrate temperatures during Pt deposition and for various annealing procedures. Intermixing between Pt and Si was observed in the as-deposited films if Pt was deposited with substrate at elevated temperatures. If the substrate was kept at 330°C during deposition, PtSi in fiberous texture structure was observed in the as-deposited films. Epitaxial PtSi layer was formed after annealing at 385°C for 1 h followed by annealing at 550°C for 2 h. The formed PtSi thin films possess a strong degree of preferred orientation with a threefold position of different grains on the (111)Si substrate. Two sets of Moiré fringes were observed with spacings 19.0 and 30.7 Å, corresponding to the interferences of 〈220〉Si reflections with 〈301〉PtSi and 〈002〉PtSi, respectively.

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Humboldt Research Fellow, December 1984 November 1985. Present address: lnstitut fur Grenzflchenforschung und Vakuumphysik der Kernforschungsanlage Julich GmbH, Postfach 1913, D-5170 Jtilich 1, Fed. Rep. of Germany.

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Present address: Electronics Research and Service Organization, Industrial Technology Research Institute, Chu-Tung Chen, Hsin-Chu Hsien, Taiwan 311, Rep. of China.

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