p-type carrier concentration control in lithium-doped zinc selenide grown by MOCVD

Abstract

Lithium-doped ZnSe epitaxial layers have been grown on GaAs substrates by metalorganic chemical vapor deposition. Tert-butyllithium (TBL) was used as a doping material. Secondary ion mass spectroscopy showed that Li concentrations in ZnSe layers could be altered from 4×10¹⁷ to 4×10¹⁷ cm^-3 by variation of the carrier gas flow rate passing through the TBL cylinder. Photoluminescence measured at 4.2 K indicated acceptor concentration increased with TBL carrier gas flow rate. Carrier concentrations N_A − N_D obtained from C − V measurements increased to about 1×10¹⁵ cm^-3 with increasing TBL carrier flow rate.