Transient annealing for the production of n+ contact layers in GaAs

doi:10.1016/0378-4363(85)90619-9

Physica B+C

Volume 129, Issues 1–3, March 1985, Pages 440-444

https://doi.org/10.1016/0378-4363(85)90619-9 Get rights and content

Abstract

A dual graphite strip heater was developed and used to produce n⁺ layers in tin and selenium implanted GaAs annealed up to 1100°C. It is demonstrated that a dual graphite strip heater gives a more reporducible and reliable measure of sample temperature than a single strip.

References (10)

B.J. Sealy
Microelectronics J.
(1982)
F.H. Eisen
S.S. Kular et al.
Sol. St. Elec.
(1984)
B.J. Sealy
Phys. Tech.
(1984)

There are more references available in the full text version of this article.

Cited by (37)

Acceptor profile control in GaAs using co-implantation of Zn and P
1999, Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
While co-implantation is well known as a means of dopant control in GaAs, we have examined the effect of displacing the two implant profiles with Zn as the acceptor and P as the co-implant. We have established that lower resistivities, comparable sheet resistances and higher mobilities can be achieved when Zn is implanted into the surface tail of a deep P implant, as compared with Zn being implanted to overlap a shallower P implant.
Recent developments in the use of ion beams at Surrey
1995, Nuclear Inst. and Methods in Physics Research, B
Recent results are summarised of projects aimed at extending the applications of ion beams. A detailed study of multi-energy implants of silicon ions in GaAs has been performed to quantify annealing kinetics and to improve our understanding of the mechanisms associated with the electrical activation process. We demonstrate how good quality ternary silicide layers are obtained by implanting cobalt prior to iron, followed by annealing at 1000°C. A plasma immersion ion implantation system has been developed and used to hydrogenate ion beam synthesised layers of β-FeSi₂, to produce improvements in photoluminescence. Finally, thin oxide layers on silicon substrates have been grown at temperatures as low as 600°C by implanting with fluorine ions prior to oxidation. The oxidation rate can be increased by up to 500% and allows significant improvements in thermal budget to be achieved.
Comparison of the effects of ion implantation induced interdiffusion in GaAs/AlGaAs and InGaAs/GaAs single quantum wells
1993, Nuclear Inst. and Methods in Physics Research, B
Implants of arsenic and gallium ions have been made into InGaAs/GaAs and GaAs/AlGaAs single quantum wells to a dose of 10¹³ atoms/cm². In each case the implantation energies are varied so as to get the peak of the implantation profile at the centre of the well. Using repetitive anneals and photoluminescence from the n = 1 electron to heavy hole transition, it has been possible to follow the evolution of the diffusion coefficients for the interdiffusion with anneal time. Following gallium implantation no effect was observed on the diffusion coefficient for intermixing in either material system. However, a region of very rapid intermixing which occurred either during implantation or the first anneal was seen in both materials. This is attributed to either radiation enhanced diffusion or the movement of interstitials created by the ion beam. Following arsenic implantation, the GaAs/AlGaAs material behaved identically to the gallium implanted samples. The InGaAs/GaAs materials, however, showed a region of intermixing where the diffusion coefficient was enhanced by an order of magnitude before returning to approximately the unimplanted control value.
Secondary defects in recrystallised 400 keV Ge<sup>+</sup> ion implanted Si
1992, Nuclear Inst. and Methods in Physics Research, B
Germanium ions have been implanted in (100) Si with an incident energy of 400 keV with doses ranging 1 × 10¹³ to 1 × 10¹⁵/cm². Rutherford backscattering spectrometry (RBS), cross-sectional transmission electron microscopy (XTEM) and microdiffraction have been used to determine the characteristics of the samples before and after rapid thermal annealing (RTA) at 1000°C for twenty seconds. By comparing XTEM micrographs, selected area electron diffraction and microdiffraction patterns, it is found that the dose for teh formation of the thick homogeneous surface amorphous layer (J = 0.046 μA/cm², T_i = RT)is 1.0 × 10¹⁵/cm². The XTEM results also reveal that the nature of secondary defects formed during the anneal of incomplete amorphous regions is different from those formed in complete and homogeneous amorphous silicon. It is concluded that the degree of amorphisation of the as-implanted layers, which is highly dependent upon the implantation conditions, has a significant effect on the microstructure of the annealed material.
Analysis of the structure and defects in heteroepitaxial Si/CoSi<inf>2</inf>/Si layers produced by ion beam synthesis and rapid thermal annealing
1992, Materials Science and Engineering B
The effects of rapid thermal annealing (RTA) on the microstructure and electrical properties of ion-beam-synthesized silicide layers fabricated using cobalt doses of 7×10¹⁷, 5×10¹⁷ and 1.5×10¹⁷ cm⁻² at an energy of 200 KeV have been studied. For all three doses, increasing RTA temperature leads to the chemical segregation of the implanted cobalt—via the thermodynamically controlled dissolution of the small CoSi₂ precipitates in the wings of the distribution. Likewise, increasing the anneal temperature affects the removal of defects lying on Si{311} lattice planes, which are created by an excess of silicon self-interstitials. For the two highest doses, the phase transformation $CoSi → CoSi_{2}$ is also facilitated by increasing anneal temperature. In all cases, it is found that the resistivity and crystallinity of the layers are critically dependent on the Co:Si ratio, with high quality low resistivity layers only being attained when this is close to 1:2, i.e. CoSi₂. After RTA at 1000 °C for 5 s, stoichiometric CoSi₂ layers were achieved for all doses, with layer thicknesses ranging from 600 to 18000 Å. The value of resistivity and crystallinity obtained for the medium dose specimen (5 × 10¹⁷ cm⁻) were close to those achieved by conventional furnace annealing, with those for the higher and lower doses being slightly higher.
Lattice site location and outdiffusion of mercury implanted in GaAs
1991, Nuclear Inst. and Methods in Physics Research, B
The formation of p⁺ layers in GaAs by mercury ion implantation has been demonstrated and abrupt electrical profiles with hole concentrations of the order of 9 × 10¹⁸ cm⁻³ have been measured after annealing at 900°C for 3 s. In the present work evidence is shown for the lattice site location and outdiffusion of the mercury ions using the Rutherford backscattering spectrometry (RBS) technique. During the rapid thermal annealing most of the mercury ions concentrate near the surface region and occupy the gallium site in the crystal lattice. These results are compared with results of the internal monitoring of the surrounding of the ^197mHg ion using the electron-gamma perturbed angular correlation (PAC) technique.

View all citing articles on Scopus

View full text

Transient annealing for the production of n+ contact layers in GaAs

Abstract

Microelectronics J.

Sol. St. Elec.

Phys. Tech.

Transient annealing for the production of n⁺ contact layers in GaAs