Elsevier

Physics Letters A

Volume 76, Issue 2, 17 March 1980, Pages 157-159
Physics Letters A

Effect of doping on positron annihilation in GaAs

https://doi.org/10.1016/0375-9601(80)90600-3Get rights and content

Abstract

The effect of doping on positron annihilation was studied in GaAs single crystals. The positron lifetimes in Si- and Ge-doped crystals (n-type) are similar to that in an instrinsic crystal. On the other hand, the lifetimes in Zn-, Cd-, Cr- and Mn-doped crystals (p-type) are shorter than that in an intrinsic one. The difference is small but significant.

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