Effect of doping on positron annihilation in GaAs
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Cited by (10)
Positron annihilation in pure and doped GaAs at low temperature
1982, Physics Letters AThe defect characterization of heavily si-doped molecular beam epitaxy-grown gaas by the monoenergetic positron method
1991, Japanese Journal of Applied PhysicsOn the character of defects in GaAs
1989, Journal of Physics: Condensed MatterPositron annihilation in GaAs
1988, Crystal Research and TechnologyNative defects in gallium arsenide
1988, Journal of Applied Physics
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