Low temperature growth of ZnSe/GaAs using hot molecular beams

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Abstract

Epitaxial layers of ZnSe/GaAs were grown successfully at the growth temperature as low as of 100°C using hot molecular beams generated by post-heating at 600°C both for Zn and Se. Although having rather inferior surface morphology, ZnSe epilayers grown at 100–150°C showed good low-temperature photoluminescence properties. The relation between the surface morphology and the growth rate, and also the role of the post-heated Se beam are discussed.

References (7)

  • J. Berkowitz et al.

    J. Chem. Phys.

    (1968)
  • D.A. Cammack et al.

    Appl. Phys. Letters

    (1990)
  • H. Cheng et al.

    Appl. Phys. Letters

    (1990)
There are more references available in the full text version of this article.

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    Citation Excerpt :

    There are several possible reasons for the absence of Pendellösung fringes, such as the epilayer being too thin, a rough surface or interface, and poor crystallinity. In this case, we attribute their absence to poor crystalline quality in the bulk ZnSe layer due to insufficient adatom migration on the surface [19]. However, there is a slight distinction in the ZnSe peak position and linewidth between the Dark and Laser MBE samples (Figure S1).

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Present address: Hitachi Ltd., Oume, Tokyo 198, Japan.

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