Elsevier

Physica B+C

Volumes 117–118, Part 1, March 1983, Pages 188-190
Physica B+C

Deep levels in semiconductors — Influence of hydrostatic pressure

https://doi.org/10.1016/0378-4363(83)90478-3Get rights and content

Abstract

Isothermal transient capacitance measurements provide a simple and yet extremely sensitive tool for the determination of pressure coefficients of deep level energies. Results for the chalcogen donors S, Se and Te in Si are in good agreement with predictions from the semiempirical model by Hjalmarson et al. In contrast to the chalcogen donors, the levels of interstitial Fe, Mn, V and Ti in Si move towards the valence band under pressure. A qualitative explanation is given for this anomaly.

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