Interfacial transition region between silicon and ultrathin plasma Si oxide

doi:10.1016/0378-5963(83)90082-X

Applications of Surface Science

Volume 16, Issues 3–4, July–August 1983, Pages 395-404

https://doi.org/10.1016/0378-5963(83)90082-X Get rights and content

Abstract

A depth profiling of ultrathin plasma Si oxide on Si is presented, based upon a combination of results obtained by Auger electron spectroscopy and low-energy electron loss spectroscopy with argon ion sputtering. The parameters of the interfacial transition region in dependence on oxide thickness and technology conditions are studied. It is concluded that the more abrupt interface is an attribute of a more perfect oxide.

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Interfacial transition region between silicon and ultrathin plasma Si oxide

Abstract

Surface Sci.

Surface Sci.

J. Phys. Chem. Solids

Thin Solid Films

Thin Solid Films

Surface Sci.

Solid State Commun.

Nucl. Instr. Methods

Surface Sci.

Surface Sci.

IEEE Trans. Nucl. Sci. NS-24

J. Electrochem. Soc.

J. Vacuum Sci. Technol.

Phys. Rev. Letters

Appl. Phys. Letters

J. Appl. Phys.

J. Vacuum Sci. Technol.