Nearly damage - free dry etching of AlGaInP/GaInP by electron cyclotron resonance technique

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Abstract

A nearly damage-free dry etching process in the material system AlGaInP/ GaInP is demonstrated. An electron cyclotron resonance (ECR) ion source has been used for plasma excitation. Photoluminescence spectroscopy at varying excitation power densities and sample temperatures is used to measure the degree of damage.

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