Optical gain in gallium selenide and indium selenide

doi:10.1016/0378-4363(81)90211-4

Physica B+C

Volume 105, Issues 1–3, May 1981, Pages 40-44

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Abstract

The stimulated emission at 80 K from layered single crystals of GaSe and InSe has been studied at high excitation density by means of nitrogen and dye laser, respectively. On both the semiconductors we observe the stimulated emission associated with exciton-exciton scattering. Moreover, as confirmed by optical gain measurements, stimulation effects from e-h plasma recombination are also observed; an intensity threshold 100 times lower in InSe than in GaSe is also determined for the Mott transition from excitonic gas to e-h plasma.

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Optical gain in gallium selenide and indium selenide

Abstract

Phys. Rev.

J. Luminescence

Solid State Commun.

Solid State Commun.

J. Appl. Phys.

Solid State Commun.

Nuovo Cimento