Characterisation of ZnSe and other II–VI semiconductors by radioactive dopants

Abstract

In the II–VI compounds ZnS, CdS, ZnSe, CdSe, ZnTe and CdTe doped with In, the formation of In_M-V_M pairs in shown to occur using the radioactive dopant ¹¹¹In along with the perturbed γγ angular correlation technique. For CdS and ZnSe, the migration energy of the metallic vacancy defect V_M and its binding energy to the donor In is determined. The creation of V_M defects under different experimental conditions is investigated, such as stoichiometry, temperature, electron irradiation and doping with Li atoms.