Elsevier

Journal of Luminescence

Volume 7, 1973, Pages 284-309
Journal of Luminescence

Optical gain in semiconductors

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Abstract

Direct measurements of optical gain in semiconductors give information on the stimulated recombination process that cannot be easily obtained from an oscillating semiconductor laser. The effects of various material parameters on the gain and saturation factors can be easily studied. The temperature dependence of the stimulated recombination in high purity GaAs will be presented as an example. The pertinence of the gain and saturation factors to the threshold and efficiency of semiconductors laser oscillators will be discussed. The significance of gain measurements on GaP doped with isoelectronic traps will be considered in terms of the observed gain and saturation properties.

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