Elsevier

Ultramicroscopy

Volume 35, Issues 3–4, June 1991, Pages 265-269
Ultramicroscopy

Electron spectroscopic imaging of dopant precipitation and segregation in silicon

https://doi.org/10.1016/0304-3991(91)90078-KGet rights and content

Abstract

Conventional, high-resolution electron microscopy and electron spectroscopy imaging methods have been applied to the characterization of furnace-annealed B-implanted Si and self-annealed As-implanted Si. The combination of these techniques allowed us to point out the presence of a coherent precipitation in the SiBx system and the segregation of As at the (111) surfaces of octahedral cavities produced during self-annealing implantation of Si. A simple ideal structural model of the voids with segregated As is proposed.

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