Elsevier

Applied Surface Science

Volume 45, Issue 3, October–November 1990, Pages 171-187
Applied Surface Science

SiC film formation on Si(001) by reaction with C2H2 beams

https://doi.org/10.1016/0169-4332(90)90001-GGet rights and content

Abstract

β-SiC films on Si(001) have been formed by direct reaction of Si crystal with C2H2 molecular beams in ultra-high vacuum. Depth profiles of the C/Si composition ratio of the films have been measured by an Auger electron spectrometer combined with an Ar+ ion sputtering gun. The structures and topographies of the films were observed by SEM and TEM. The growth rate of the film has been found to be proportional to the reaction time and the beam flux under low beam flux condition. However, the growth rate decreased at high temperatures. In this case, the surface under reaction was covered with a Si-rich layer and the epitaxial growth of SiC crystals was observed on the substrate. In the substrate pyramidally shaped corrosion along the (111) face was observed by TEM. In the etched parts SiC was also formed by reaction with C-containing reactants.

Under high beam flux condition, the surface of the growing film was covered with a C-rich layer and the growth rate decreased. In this case, the grown film consisted of polycrystals and was covered with hillocks.

References (19)

  • A.J. Learn et al.

    Thin Solid Films

    (1970)
  • R. Kaplan

    Surf. Sci.

    (1989)
  • M. Nishijima et al.

    Surf. Sci.

    (1987)
  • S.Y. Chu et al.

    Surf. Sci.

    (1988)
  • W.G. Spitzer et al.

    Phys. Rev.

    (1959)
  • H. Nakashima et al.

    Jpn. J. Appl. Phys.

    (1966)
  • P. Rai-Choudhury et al.

    Solid State Sci.

    (1969)
  • R.N. Ghoshtagore et al.

    Phys. Rev.

    (1966)
  • J. Graul et al.

    Appl. Phys. Lett.

    (1972)
There are more references available in the full text version of this article.

Cited by (54)

  • Use of molecular beams for kinetic measurements of chemical reactions on solid surfaces

    2017, Surface Science Reports
    Citation Excerpt :

    Silicon carbide films have also been made using molecular beams. In one case, hot C2H2 has been dosed on Si(100) for this purpose [549]. The growth rate of the film was found to be proportional to the beam flux under low beam-flux condition, but to decrease at high temperatures because of carbon poisoning.

  • Formation of graphene/SiC/AlN multilayers synthesized by pulsed laser deposition on Si(110) substrates

    2017, Journal of Crystal Growth
    Citation Excerpt :

    When the SiC film was grown directly on Si(110), many voids were observed on the surface, as shown in Fig. 6(a). It is well known that these voids are formed by Si outdiffusion from a Si substrate into a SiC film during SiC growth [8,34–36]. On the other hand, no voids are observed on the SiC film and the film surface is relatively smooth without macro defects such as facets.

  • Growth of silicon carbide on Si(100) substrate with an intermediate aluminum nitride layer by ultralow-pressure chemical vapor deposition using monomethylsilane

    2015, Journal of Crystal Growth
    Citation Excerpt :

    The surface of the buffer layer is especially crucial because surface degradation may initiate defects such as stacking faults in the growing film, which, once formed, are very difficult to remove. The carbonization method, which utilizes reactions between hydrocarbon molecules and the Si substrate, has been a common tool in forming a 3C–SiC buffer layer having the same crystal orientation as the Si substrate [1–9]. Previous investigations [5] have revealed that the role of carbonization is more on forming a diffusion barrier against Si atoms than on relaxing the lattice mismatch.

  • Solid phase epitaxial growth of 3C-SiC thin film on Si and annihilation of nanopores

    2014, Acta Materialia
    Citation Excerpt :

    In recent years, considerable attention has been paid to understanding the growth of SiC on Si substrates in order to integrate SiC devices with Si technology [1–4]. The SiC layers on Si substrates are typically grown by gas source and solid source molecular beam epitaxy (MBE) [5–8] and chemical vapor deposition (CVD) [9–12]. Recent efforts to produce a SiC buffer layer to seed the growth of higher quality films include the solid state epitaxial growth of SiC on Si obtained by the chemical reaction between the Si substrate and gaseous CO [13,14], and also between Si substrate and ethylene gas [6,15,16].

View all citing articles on Scopus

NEC Nippon Electric Co., Ltd.

∗∗

Ricoh Co., Ltd.

View full text