High temperature oxygen implantation in silicon: Soil structure formation characteristics
References (18)
- et al.
- et al.
Vacuum
(1984) - et al.
Appl. Phys. Lett.
(1984) - et al.
- et al.
Jpn. J. Appl. Phys.
(1985) - et al.
J. Appl. Phys.
(1984) - et al.
J. Appl. Phys.
(1986) Appl. Phys. Lett.
(1986)- et al.
Appl. Phys. Lett.
(1985)
There are more references available in the full text version of this article.
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