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Accurate theoretical intensities are presented for the phonon scattering at 295 K for Si. The one-phonon and n-phonon cross sections are shown for the principal symmetry directions and the total phonon scattering contours for a section of the (10\bar 1) plane. Previous total phonon calculations have been confined to materials of simpler structure and to a coarser mesh of wavevectors. The Si cross sections show general features which are expected to be seen in a wide variety of materials. These include the behaviour of the scattering near forbidden reflexions, the behaviour in three essentially different kinds of zones and the behaviour close to Bragg peaks. Results are also presented for the temperature dependence of the harmonic Debye-Waller factor.
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