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Photoconductive response times of Si-on-sapphire damaged with Si28 ions

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Abstract

We present autocorrelation measurements showing the high-speed sampling and switching capabilities of SOS photoconducting elements which have been ion implanted with 60 and 160 keV Si28 ions. An analysis of the circuit shows the intrinsic photoconductive decay to be very fast (∼3.5 ps) and that the measured response is primarily limited by the gap capacitance and the associated R-C time.

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  1. Royal Signals and Radar Establishment, St. Andrews Road, WR 14 3 PS, Great Malvern, Worcestershire, UK

    R. J. Manning & J. R. Hill

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  1. R. J. Manning
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  2. J. R. Hill
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Manning, R.J., Hill, J.R. Photoconductive response times of Si-on-sapphire damaged with Si28 ions. Appl. Phys. B 38, 17–21 (1985). https://doi.org/10.1007/BF00691765

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