Abstract.
Sapphire wafer is found to be scribed and cut freely by plasma from a metal surface on which a Q-switched Nd:YAG laser beam is focused through the wafer. The wafer is scribed enough to be cut using a Q-switched Nd:YAG laser with the average power of 5 W at atmospheric environment without a vacuum chamber. This method is successfully applied to split each device from a blue LED wafer including about 10000 blue LED devices grown on a sapphire wafer.
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Received: 29 December 1999 / Accepted: 7 January 2000 / Published online: 5 April 2000
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Lee, JM., Jang, JH. & Yoo, TK. Scribing and cutting a blue LED wafer using a Q-switched. Nd:YAG laser . Appl Phys A 70, 561–564 (2000). https://doi.org/10.1007/s003390051080
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DOI: https://doi.org/10.1007/s003390051080