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High quality β-SiC films obtained by low-temperature heteroepitaxy combined with a fast carbonization step

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Authors and Affiliations

  1. Daimler Benz AG, Department FT2-M, Postfach 800465, 81663 München, Germany (Fax: +49-89/6072-5157, E-mail: Helmut.Moeller@dbag.muc.daimlerbenz.com), , , , , , DE

    H. Möller, M. Eickhoff, M. Rapp & G. Krötz

  2. Daimler Benz AG, Department F2M/S, Goldsteinstrasse 235, 60528 Frankfurt, Germany, , , , , , DE

    H.W. Grueninger

Authors
  1. H. Möller
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  2. M. Eickhoff
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  3. M. Rapp
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  4. H.W. Grueninger
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  5. G. Krötz
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Received: 11 September 1998 / Accepted: 19 October 1998 / Published online: 24 February 1999

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Möller, H., Eickhoff, M., Rapp, M. et al. High quality β-SiC films obtained by low-temperature heteroepitaxy combined with a fast carbonization step . Appl Phys A 68, 461–465 (1999). https://doi.org/10.1007/s003390050924

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  • DOI: https://doi.org/10.1007/s003390050924

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