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Lateral variation of quantum-well confinement energy in triangular-shaped dot-like structures grown by molecular beam epitaxy on patterned GaAs (311)A substrates

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Authors and Affiliations

  1. Paul Drude Institut für Festkörperelektronik, Hausvogteiplatz 5-7, D-10117 Berlin, Germany, , , , , , DE

    Z.C. Niu, R. Nötzel, U. Jahn, M. Ramsteiner, H.-P. Schönherr, J. Fricke, Z.B. Xiao, L. Däweritz & K.H. Ploog

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  1. Z.C. Niu
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  2. R. Nötzel
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  3. U. Jahn
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  4. M. Ramsteiner
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  5. H.-P. Schönherr
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  6. J. Fricke
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  7. Z.B. Xiao
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  8. L. Däweritz
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  9. K.H. Ploog
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Received: 13 Oktober 1997/Accepted: 25 January 1998

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Niu, Z., Nötzel, R., Jahn, U. et al. Lateral variation of quantum-well confinement energy in triangular-shaped dot-like structures grown by molecular beam epitaxy on patterned GaAs (311)A substrates . Appl Phys A 67, 135–138 (1998). https://doi.org/10.1007/s003390050750

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  • DOI: https://doi.org/10.1007/s003390050750

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