Preparation of thin films of the ternary heavy fermion system CeNi2Ge2

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Ge₂ layers on W(110). In order to produce well-ordered and atomically clean surfaces of the Ce-based intermetallic system the growth was performed under UHV conditions (p<2×10^-11 mbar). Both the polycrystalline CeNi₂Ge₂ compound and the individual elements Ce, Ni, and Ge were used as evaporants. The characterisation of the layers was made with LEED, SEM, and XPS. We find a significant influence of the substrate temperature and the evaporation power on the growth characteristics. The compound material CeNi₂Ge₂ exhibits complicated behaviour when evaporated. Under carefully selected growth conditions we obtain well-ordered films with a stoichiometry of Ce:Ni:Ge=1:2:2 and a (001) oriented surface of the body-centered tetragonal ThCr₂Si₂-type structure. The k_∥ dispersion and binding energies of the valence bands of these layers were determined with ARUPS.