Abstract
Picosecond time-resolved Transient Reflecting Grating (TRG) measurements are demonstrated for GHz ultrasonic and thermal spectroscopies of thin films and sub-surface regions of sub-μm scale. The measurements should be tools for electrochemical interface monitoring and time-resolved imaging. Some results are presented to show ion-implantation-induced surface hardening and unusual heat-diffusion behavior near a silicon surface. A model describing potential dependence of TRG responses at an electrochemical interface is proposed. An image of photoexcited carrier density is compared with a thermal image for a He-ion-implanted silicon wafer to demonstrate the time-resolved imaging.
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Calculated with data from — pp. 6–138
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Sawada, T., Harata, A. Transient reflecting grating for sub-surface analysis: GHz ultrasonic and thermal spectroscopies and imaging. Appl. Phys. A 61, 263–268 (1995). https://doi.org/10.1007/BF01538191
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DOI: https://doi.org/10.1007/BF01538191