Abstract
We report on temperature (77 to 300 K) and voltage dependent low frequency (100 Hz to 100 kHz) noise behavior of InGaAs/InP photodiodes in non-equilibrium steady state. In addition to common white, 1/f, and Lorentz noise we are able to observe for the first time minima and maxima in the photocurrent noise spectra. The recombination of a pair of free carriers through a recombination center at the heterointerface provides the correlation between the electron and hole ensembles necessary to explain the observed noise reduction.
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References
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